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V58C2128804S 参数 Datasheet PDF下载

V58C2128804S图片预览
型号: V58C2128804S
PDF下载: 下载PDF文件 查看货源
内容描述: 高性能2.5伏128兆位的DDR SDRAM [HIGH PERFORMANCE 2.5 VOLT 128 Mbit DDR SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 59 页 / 922 K
品牌: MOSEL [ MOSEL VITELIC, CORP ]
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V58C2128(804/404/164)S  
Block Diagram  
8M x 16  
Row Addresses  
Column Addresses  
A0 - A8, AP, BA0, BA1  
A0 - A11, BA0, BA1  
Row address  
buffer  
Column address  
counter  
Column address  
buffer  
Refresh Counter  
Row decoder  
Row decoder  
Row decoder  
Row decoder  
Memory array  
Bank 0  
Memory array  
Bank 1  
Memory array  
Bank 2  
Memory array  
Bank 3  
4096 x 256  
x 32 bit  
4096 x 256  
x 32 bit  
4096 x 256  
x 32 bit  
4096 x 256  
x 32 bit  
Control logic & timing generator  
Input buffer  
Output buffer  
DQ0-DQ15  
CK, CK  
DQS  
DLL  
Strobe  
Gen.  
Data Strobe  
Capacitance*  
Absolute Maximum Ratings*  
Operating temperature range ..................0 to 70 °C  
Storage temperature range ................-55 to 150 °C  
T = 0 to 70°C, V = 2.5V ± 0.2V, f = 1 Mhz  
A
CC  
Input Capacitance  
Symbol Min Max Unit  
V
V
Supply Voltage Relative to V .....-1V to +3.6V  
DD  
SS  
Supply Voltage Relative to V  
DDQ  
SS  
BA0, BA1, CKE, CS, RAS, (CAS,  
A0-A11, WE)  
CINI  
2
3.0 pF  
3.0 pF  
......................................................-1V to +3.6V  
VREF and Inputs Voltage Relative to V  
SS  
Input Capacitance (CK, CK)  
Data & DQS I/O Capacitance  
Input Capacitance (DM)  
CIN2  
COUT  
CIN3  
2
4
4
......................................................-1V to +3.6V  
I/O Pins Voltage Relative to V  
5
pF  
SS  
..........................................-0.5V to V  
Power dissipation .......................................... 1.6 W  
+0.5V  
DDQ  
5.0 pF  
*Note: Capacitance is sampled and not 100% tested.  
Data out current (short circuit)...................... 50 mA  
*Note: Stresses above those listed under “Absolute Maximum  
Ratings” may cause permanent damage of the device.  
Exposure to absolute maximum rating conditions for  
extended periods may affect device reliability.  
V58C2128(804/404/164)S Rev. 1.6 March 2002  
5
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