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PSS20S92F6-AG 参数 Datasheet PDF下载

PSS20S92F6-AG图片预览
型号: PSS20S92F6-AG
PDF下载: 下载PDF文件 查看货源
内容描述: 双列直插式封装智能功率模块 [Dual-In-Line Package Intelligent Power Module]
分类和应用:
文件页数/大小: 12 页 / 437 K
品牌: MITSUBISHI [ Mitsubishi Group ]
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< Dual-In-Line Package Intelligent Power Module >  
PSS20S92F6-AG, PSS20S92E6-AG  
TRANSFER MOLDING TYPE  
INSULATED TYPE  
MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)  
INVERTER PART  
Symbol  
VCC  
Parameter  
Supply voltage  
Condition  
Applied between P-NU,NV,NW  
Applied between P-NU,NV,NW  
Ratings  
450  
Unit  
V
VCC(surge)  
VCES  
±IC  
Supply voltage (surge)  
500  
V
Collector-emitter voltage  
Each IGBT collector current  
Each IGBT collector current (peak)  
Collector dissipation  
600  
V
TC= 25°C  
20  
A
±ICP  
TC= 25°C, less than 1ms  
TC= 25°C, per 1 chip  
40  
A
PC  
33.3  
W
°C  
Tj  
Junction temperature  
(Note 1)  
-30~+150  
Note1: The maximum junction temperature rating of built-in power chips is 150°C(@Tc≤100°C).However, to ensure safe operation of DIPIPM, the average  
junction temperature should be limited to Tj(Ave)≤125°C (@Tc≤100°C).  
CONTROL (PROTECTION) PART  
Symbol  
VD  
Parameter  
Control supply voltage  
Control supply voltage  
Input voltage  
Condition  
Applied between VP1-VNC, VN1-VNC  
Applied between VUFB-U, VVFB-V, VWFB-W  
Applied between UP, VP, WP-VPC, UN, VN, WN-VNC  
Applied between FO-VNC  
Ratings  
20  
Unit  
V
VDB  
VIN  
VFO  
IFO  
20  
V
-0.5~VD+0.5  
-0.5~VD+0.5  
1
V
Fault output supply voltage  
Fault output current  
V
Sink current at FO terminal  
mA  
V
VSC  
Current sensing input voltage  
Applied between CIN-VNC  
-0.5~VD+0.5  
TOTAL SYSTEM  
Symbol  
Parameter  
Self protection supply voltage limit  
(Short circuit protection capability)  
Condition  
VD = 13.5~16.5V, Inverter Part  
Tj = 125°C, non-repetitive, less than 2μs  
Ratings  
400  
Unit  
V
VCC(PROT)  
TC  
Module case operation temperature  
Storage temperature  
Measurement point of Tc is provided in Fig.1  
-30~+100  
-40~+125  
°C  
°C  
Tstg  
60Hz, Sinusoidal, AC 1min, between connected all pins  
and heat sink plate  
Viso  
Isolation voltage  
1500  
Vrms  
Fig. 1: TC MEASUREMENT POINT  
Control terminals  
DIPIPM  
11.6mm  
3mm  
IGBT chip position  
Tc point  
Heat sink side  
Power terminals  
THERMAL RESISTANCE  
Limits  
Typ.  
Symbol  
Parameter  
Condition  
Unit  
Min.  
Max.  
Rth(j-c)Q  
Rth(j-c)F  
Inverter IGBT part (per 1/6 module)  
Inverter FWDi part (per 1/6 module)  
-
-
-
-
3.0  
3.9  
K/W  
K/W  
Junction to case thermal  
resistance  
(Note 2)  
Note 2: Grease with good thermal conductivity and long-term endurance should be applied evenly with about +100μm~+200μm on the contacting surface of  
DIPIPM and heat sink. The contacting thermal resistance between DIPIPM case and heat sink Rth(c-f) is determined by the thickness and the thermal  
conductivity of the applied grease. For reference, Rth(c-f) is about 0.3K/W (per 1/6 module, grease thickness: 20μm, thermal conductivity: 1.0W/m•K).  
Publication Date : October 2013  
2
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