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PC28F128G18FF 参数 Datasheet PDF下载

PC28F128G18FF图片预览
型号: PC28F128G18FF
PDF下载: 下载PDF文件 查看货源
内容描述: 128MB, 256MB,512MB ,1GB的StrataFlash存储器 [128Mb, 256Mb, 512Mb, 1Gb StrataFlash Memory]
分类和应用: 存储
文件页数/大小: 118 页 / 1154 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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128Mb, 256Mb, 512Mb, 1Gb StrataFlash Memory  
Revision History  
Revision History  
Rev. F – 8/11  
• Removed (45nm, 65nm, Litho) from the Device ID Codes table.  
• Changed balls H2 and H6 from VSS to VSSQ in Figure 2.  
• Corrected A/D MUX symbol from A[MAX:16] to A[MAX:17] in the Signal Descriptions  
table.  
• Added the Address Mapping for Address/ Data Mux Mode table.  
• Updated the Read Configuration Register Bit Definitions table.  
Rev. E – 8/11  
• CFI ID string table, hex offset 13h: Changed address 13 hex code to 00; changed ad-  
dress 14 hex code to 02.  
Table: DC Voltage Characteristics and Operating Conditions: Changed VIL Max to 0.45;  
changed VIH Min to VCCQ - 0.45.  
Rev. D – 5/11  
Rev. C – 2/11  
Rev. B – 12/10  
Rev. A – 12/10  
• Revised for reuse.  
• Added AAD-mux description.  
• Made miscellaneous text edits and formatting improvements.  
• Initial release.  
8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900  
www.micron.com/productsupport Customer Comment Line: 800-932-4992  
Micron and the Micron logo are trademarks of Micron Technology, Inc.  
All other trademarks are the property of their respective owners.  
This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein.  
Although considered final, these specifications are subject to change, as further product development and data characterization some-  
times occur.  
PDF: 09005aef8448483a  
128_256_512_65nm_g18.pdf - Rev. F 8/11 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
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© 2011 Micron Technology, Inc. All rights reserved.  
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