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MT54W1MH36BF-5 参数 Datasheet PDF下载

MT54W1MH36BF-5图片预览
型号: MT54W1MH36BF-5
PDF下载: 下载PDF文件 查看货源
内容描述: 36MB QDR⑩II SRAM 2字突发 [36Mb QDR⑩II SRAM 2-WORD BURST]
分类和应用: 静态存储器
文件页数/大小: 27 页 / 522 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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ADVANCE  
4 MEG x 8, 4 MEG x 9, 2 MEG x 18, 1 MEG x 36  
1.8V VDD, HSTL, QDRIIb2 SRAM  
IDENTIFICATION REGISTER DEFINITIONS  
INSTRUCTION FIELD  
ALL DEVICES  
DESCRIPTION  
REVISION NUMBER (31:28)  
DEVICE ID (28:12)  
000  
Version number.  
00def0Wx0t0q0b0s0 def = 001 for 36Mb density  
wx = 11 for x36, 10 for x18, 00 for x9, and 01 for x8  
t = 1 for DLL version, 0 for non-DLL version  
q = 1 for QDR, 0 for DDR  
b = 1 for four-word burst, 0 for two-word burst  
s = 1 for separate I/O, 0 for common I/O  
00000101100  
1
MICRON JEDEC ID CODE  
(11:1)  
Allows unique identification of SRAM vendor.  
ID Register Presence  
Indicator (0)  
Indicates the presence of an ID register.  
SCAN REGISTER SIZES  
REGISTER NAME  
BIT SIZE (x18)  
3
1
Instruction  
Bypass  
32  
109  
ID  
Boundary Scan  
INSTRUCTION CODES  
INSTRUCTION  
CODE  
DESCRIPTION  
EXTEST1, 2  
000  
Captures I/O ring contents. Places the boundary scan register between  
TDI and TDO.  
001  
010  
IDCODE  
Loads the ID register with the vendor ID code and places the register  
between TDI and TDO. This operation does not affect SRAM operations.  
SAMPLE Z  
Captures I/O ring contents. Places the boundary scan register between  
TDI and TDO. Forces all SRAM output drivers to a High-Z state.  
RESERVED  
011  
100  
Do Not Use: This instruction is reserved for future use.  
SAMPLE/PRELOAD  
Captures I/O ring contents. Places the boundary scan register between  
TDI and TDO.  
101  
110  
111  
RESERVED  
RESERVED  
BYPASS  
Do Not Use: This instruction is reserved for future use.  
Do Not Use: This instruction is reserved for future use.  
Places the bypass register between TDI and TDO. This operation does  
not affect SRAM operations.  
NOTE:  
1. Data in output register is not guaranteed if EXTEST instruction is loaded.  
2. After performing EXTEST, power-up conditions are required in order to return part to normal operation.  
36Mb: 1.8V VDD, HSTL, QDRIIb2 SRAM  
MT54W2MH18B_A.fm - Rev 9/02  
Micron Technology, Inc., reserves the right to change products or specifications without notice.  
©2002, Micron Technology Inc.  
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