4 MEG x 4
FPM DRAM
READ-WRITECYCLE
(LATEWRITEand READ-MODIFY-WRITEcycles)
t
RWC
t
t
RAS
RP
V
V
IH
IL
RAS#
CAS#
t
CSH
t
RSH
t
t
t
t
CAS
CRP
ASR
RCD
V
V
IH
IL
t
AR
t
RAD
t
t
t
t
CAH
RAH
ASC
RCS
V
V
IH
IL
ADDR
ROW
COLUMN
ROW
t
t
t
t
RWD
CWL
RWL
WP
t
CWD
t
AWD
V
V
IH
IL
WE#
t
AA
t
RAC
t
CAC
t
t
DS
DH
t
CLZ
V
V
IOH
IOL
VALID D
VALID D
DQ
OPEN
OPEN
OUT
IN
t
t
t
OE
OD
OEH
V
V
IH
IL
OE#
DON’T CARE
UNDEFINED
TIMING PARAMETERS
-5
-6
-5
-6
SYMBOL
MIN
MAX
MIN
MAX
UNITS
ns
SYMBOL
MIN
MAX
12
MIN
MAX
15
UNITS
ns
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
AA
25
30
OD
0
0
t
AR
38
0
45
0
ns
OE
12
15
ns
t
ASC
ns
OEH
RAC
RAD
RAH
RAS
RCD
RCS
RP
8
10
ns
t
ASR
0
0
ns
50
60
ns
t
AWD
42
49
ns
9
9
12
10
60
14
0
ns
t
CAC
13
15
ns
ns
t
CAH
8
8
10
10
0
ns
50
11
0
10,000
10,000
ns
t
CAS
10,000
10,000
ns
ns
t
CLZ
0
ns
ns
t
CRP
5
5
ns
30
13
116
67
13
5
40
15
140
79
15
5
ns
t
CSH
38
28
8
45
35
10
10
0
ns
RSH
RWC
RWD
RWL
WP
ns
t
CWD
ns
ns
t
CWL
ns
ns
t
DH
8
ns
ns
t
DS
0
ns
ns
4 Meg x 4 FPM DRAM
D49_5V.p65 – Rev. 5/00
Micron Technology, Inc., reservesthe right to change productsor specificationswithout notice.
©2000, Micron Technology, Inc.
11
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