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MT48LC8M8A2 参数 Datasheet PDF下载

MT48LC8M8A2图片预览
型号: MT48LC8M8A2
PDF下载: 下载PDF文件 查看货源
内容描述: 同步DRAM [SYNCHRONOUS DRAM]
分类和应用: 动态存储器
文件页数/大小: 55 页 / 1456 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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64Mb : x4, x8, x16  
SDRAM  
NOTES  
1. All voltages referenced to VSS.  
13. IDD specifications are tested after the device is prop-  
erly initialized.  
14. Tim ing actually specified by CKS; clock(s) speci-  
2. This param eter is sam pled. VDD, VDDQ = +3.3V;  
f = 1 MHz, TA = 25°C; pin under test biased at 1.4V.  
3. IDD is dependent on output loading and cycle rates.  
Specified values are obtained with m inim um cycle  
tim e and the outputs open.  
4. Enables on-chip refresh and address counters.  
5. The m in im um specification s are used on ly to  
indicate cycle tim e at which proper operation over  
the full tem perature range (0°C £ TA £ +70°C and  
-40°C £ TA £ +85°C for IT parts) is ensured.  
6. An initial pause of 100µs is required after power-  
up, followed by two AUTO REFRESH com m ands,  
before proper device operation is ensured. (VDD  
and VDDQ m ust be powered up sim ultaneously. VSS  
and VSSQ m ust be at sam e potential.) The two  
AUTO REFRESH com m and wake-ups should be  
repeated any tim e the REF refresh requirem ent is  
exceeded.  
7. AC characteristics assum e T = 1ns.  
8. In addition to m eeting the transition rate specifi-  
cation, the clock and CKE m ust transit between VIH  
and VIL (or between VIL and VIH) in a m onotonic  
m an n er.  
t
fied as a reference only at m inim um cycle rate.  
t
t
15. Tim ing actually specified by WR plus RP; clock(s)  
specified as a reference only at m inim um cycle rate.  
t
16. Tim ing actually specified by WR.  
17. Required clocks are specified by JEDEC function-  
ality and are not dependent on any tim ing param -  
eter.  
18. The IDD current will increase or decrease propor-  
tionally according to the am ount of frequency al-  
teration for the test condition.  
19. Address transitions average one transition every  
two clocks.  
20. CLK m ust be toggled a m inim um of two tim es dur-  
ing this period.  
t
t
21. Based on tCK = 10ns for -8E , CK=7.5ns for -75  
t
and -7E, CK = 6ns for -6.  
t
22. VIH overshoot: VIH (MAX) = VDDQ + 2V for a pulse  
width £ 3ns, and the pulse width cannot be greater  
than one third of the cycle rate. VIL undershoot: VIL  
(MIN) = -2V for a pulse width £ 3ns.  
23. The clock frequency m ust rem ain constant (stable  
clock is defined as a signal cycling within tim ing  
constraints specified for the clock pin) during ac-  
cess or precharge states (READ, WRITE, including  
tWR, and PRECHARGE com m ands). CKE m ay be  
used to reduce the data rate.  
9. Outputs m easured at 1.5V with equivalent load:  
Q
50pF  
24. Auto precharge m ode only. The precharge tim ing  
budget (tRP) begins 6ns/ 7ns/ 7.5ns/ 7ns after the  
first clock delay, after the last WRITE is executed.  
25. Precharge m ode only.  
t
10. HZ defines the tim e at which the output achieves  
the open circuit condition; it is not a reference to  
VOH or VOL. The last valid data elem ent will m eet  
tOH before going High-Z.  
26. JEDEC and PC100 specify three clocks.  
t
27. AC for -75/ -7E at CL = 3 with no load is 4.6ns and is  
11. AC tim ing and IDD tests have VIL = 0V and VIH = 3V,  
with tim ing referenced to 1.5V crossover point. If  
the input transition tim e is longer than 1 ns, then  
the tim ing is referenced at VIL (MAX) and VIH (MIN)  
and no longer at the 1.5V crossover point. CLK  
should always be 1.5V referenced to crossover. Re-  
fer to Micron Technical Note TN-48-09  
12. Other input signals are allowed to transition no  
m ore than once every two clocks and are otherwise  
at valid VIH or VIL levels.  
guaranteed by design.  
28. Param eter guaranteed by design.  
29. PC100 specifies a m axim um of 4pF.  
30. PC100 specifies a m axim um of 5pF.  
31. PC100 specifies a m axim um of 6.5pF.  
t
32. For -8E, CL = 2 and CK = 10ns; for -75, CL = 3 and  
tCK = 7.5ns; for -7E, CL = 2 and CK = 7.5ns; for -6,  
t
t
CL = 3 and CK = 6ns.  
33. CKE is HIGH durin g refresh com m an d period  
tRFC (MIN) else CKE is LOW. The IDD6 lim it is actu-  
ally a nom inal value and does not result in a fail  
valu e.  
64Mb: x4, x8, x16 SDRAM  
64MSDRAM_F.p65 – Rev. F; Pub. 1/03  
Micron Technology, Inc., reservesthe right to change productsor specificationswithout notice.  
©2003, Micron Technology, Inc.  
35  
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