64Mb : x4, x8, x16
SDRAM
AC FUNCTIONAL CHARACTERISTICS
(Notes: 5, 6, 7, 8, 9, 11; notes appear on page 35) VDD, VDDQ = +3.3V ±0.3V
PARAMETER
SYMBOL -6
-7E -75
-8E UNITS NOTES
t
t
READ/WRITEcommand to READ/WRITEcommand
CKE to clock disable or power-down entry mode
CKE to clock enable or power-down exit setup mode
DQM to input data delay
CCD
1
1
1
0
0
2
0
5
2
1
1
2
2
3
2
1
1
1
0
0
2
0
4
2
1
1
2
2
3
2
1
1
1
0
0
2
0
5
2
1
1
2
2
3
2
1
1
1
0
0
2
0
4
2
1
1
2
2
3
2
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
17
14
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
CKED
t
PED
14
t
DQD
17
t
DQM to data mask during WRITEs
DQM
17
t
DQM to data high-impedance during READs
WRITE command to input data delay
Data-in to ACTIVEcommand
DQZ
DWD
17
t
17
t
DAL
DPL
BDL
CDL
RDL
15, 21
16, 21
17
t
t
t
t
Data-in to PRECHARGEcommand
Last data-in to burst STOP command
Last data-in to new READ/WRITEcommand
Last data-in to PRECHARGEcommand
LOADMODEREGISTERcommand to ACTIVEor REFRESHcommand
Data-out to high-impedance from PRECHARGEcommand
17
16, 21
26
t
MRD
t
CL = 3 ROH(3)
17
t
CL = 2 ROH(2)
17
64Mb: x4, x8, x16 SDRAM
64MSDRAM_F.p65 – Rev. F; Pub. 1/03
Micron Technology, Inc., reservesthe right to change productsor specificationswithout notice.
©2003, Micron Technology, Inc.
34
MICRON [ MICRON TECHNOLOGY ]
