64Mb : x4, x8, x16
SDRAM
*Stresses greater than those listed under “Absolute
Maxim um Ratings” m ay cause perm anent dam age to
the device. This is a stress rating only, and functional
operation of the device at these or any other conditions
above those indicated in the operational sections of
this specification is not im plied. Exposure to absolute
m axim um rating conditions for extended periods m ay
affect reliability.
ABSOLUTEMAXIMUM RATINGS*
Voltage on VDD, VDDQ Supply
Relative to VSS ............................................ -1V to +4.6V
Voltage on Inputs, NC or I/ O Pins
Relative to VSS ............................................ -1V to +4.6V
Operating Tem perature,
T
A (com m ercial) ...................................... 0°C to +70°C
Operating Tem perature,
TA (extended; IT parts) ...................... -40°C to +85°C
Storage Tem perature (plastic) ............ -55°C to +150°C
Power Dissipation ........................................................ 1W
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(Notes: 1, 5, 6; notes appear on page 35); VDD, VDDQ = +3.3V ±0.3V
PARAMETER/CONDITION
SYMBOL
VDD, VDDQ
VIH
MIN
3
MAX UNITS NOTES
Supply Voltage
3.6
VDD + 0.3
0.8
V
V
V
Input High Voltage: Logic 1; All inputs
Input Low Voltage: Logic 0; All inputs
2
22
22
VIL
-0.3
Input Leakage Current:
Any input 0V £ VIN £ VDD
II
-5
5
µA
(All other pins not under test = 0V)
Output Leakage Current: DQs are disabled; 0V £ VOUT £ VDDQ
IOZ
-5
5
–
µA
V
Output Levels:
VOH
2.4
Output High Voltage (IOUT = -4mA)
Output Low Voltage (IOUT = 4mA)
VOL
–
0.4
V
IDD SPECIFICATIONS AND CONDITIONS
(Notes: 1, 5, 6, 11, 13; notes appear on page 35) ; VDD, VDDQ = +3.3V ±0.3V
M AX
P A RA M ETER/CO N D ITIO N
SYMBOL
-6
-7 E -7 5 -8 E UN ITS N O TES
Operating Current: Active Mode;
Burst = 2; READ or WRITE; RC >= RC (MIN)
IDD1
150
125 115
95
m A
m A
m A
3, 18,
19, 32
t
t
Standby Current: Power-Down Mode; All banks idle;
CKE = LOW
IDD2
IDD3
2
2
2
2
32
Standby Current: Active Mode;
CKE = HIGH; CS# = HIGH; All banks active after RCD met;
60
45
45
35
3, 12,
19, 32
t
No accesses in progress
Operating Current: Burst Mode; Page burst;
READ or WRITE; All banks active
IDD4
IDD5
180
250
150 140 120
230 210 190
m A
m A
3, 18,
19, 32
t
Auto Refresh Current:
tRFC = RFC (MIN)
3, 12,
18, 19,
32, 33
CKE = HIGH; CS# = HIGH
tRFC = 15.625µs
Standard
IDD6
IDD7
3
1
3
1
3
1
3
1
Self Refresh Current:
m A
4
CKE £ 0.2V
Low power (L)
0.5
0.5
0.5
0.5
64Mb: x4, x8, x16 SDRAM
64MSDRAM_F.p65 – Rev. F; Pub. 1/03
Micron Technology, Inc., reservesthe right to change productsor specificationswithout notice.
©2003, Micron Technology, Inc.
32
MICRON [ MICRON TECHNOLOGY ]
