欢迎访问ic37.com |
会员登录 免费注册
发布采购

MT48LC8M8A2 参数 Datasheet PDF下载

MT48LC8M8A2图片预览
型号: MT48LC8M8A2
PDF下载: 下载PDF文件 查看货源
内容描述: 同步DRAM [SYNCHRONOUS DRAM]
分类和应用: 动态存储器
文件页数/大小: 55 页 / 1456 K
品牌: MICRON [ MICRON TECHNOLOGY ]
 浏览型号MT48LC8M8A2的Datasheet PDF文件第26页浏览型号MT48LC8M8A2的Datasheet PDF文件第27页浏览型号MT48LC8M8A2的Datasheet PDF文件第28页浏览型号MT48LC8M8A2的Datasheet PDF文件第29页浏览型号MT48LC8M8A2的Datasheet PDF文件第31页浏览型号MT48LC8M8A2的Datasheet PDF文件第32页浏览型号MT48LC8M8A2的Datasheet PDF文件第33页浏览型号MT48LC8M8A2的Datasheet PDF文件第34页  
64Mb : x4, x8, x16  
SDRAM  
TRUTH TABLE 4 – CURRENT STATE BANK n , COMMAND TO BANK m  
(Notes: 1-6; notes appear below and on next page)  
CURRENT STATE CS# RAS# CAS# WE# COMMAND (ACTION)  
NOTES  
Any  
H
L
X
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
X
H
X
L
X
H
X
H
L
X
H
X
H
H
L
COMMAND INHIBIT (NOP/Continue previous operation)  
NO OPERATION (NOP/Continue previous operation)  
Any Command Otherwise Allowed to Bank m  
ACTIVE (Select and activate row)  
Idle  
Row  
Activating,  
Active, or  
Precharging  
Read  
H
H
L
READ (Select column and start READ burst)  
WRITE (Select column and start WRITE burst)  
PRECHARGE  
7
7
L
H
H
L
L
L
H
H
L
ACTIVE (Select and activate row)  
(Auto  
H
H
L
READ (Select column and start new READ burst)  
WRITE (Select column and start WRITE burst)  
PRECHARGE  
7, 10  
7, 11  
9
Precharge  
Disabled)  
Write  
L
H
H
L
L
L
H
H
L
ACTIVE (Select and activate row)  
(Auto  
H
H
L
READ (Select column and start READ burst)  
WRITE (Select column and start new WRITE burst)  
PRECHARGE  
7, 12  
7, 13  
9
Precharge  
Disabled)  
Read  
L
H
H
L
L
L
H
H
L
ACTIVE (Select and activate row)  
(With Auto  
Precharge)  
H
H
L
READ (Select column and start new READ burst)  
WRITE (Select column and start WRITE burst)  
PRECHARGE  
7, 8, 14  
7, 8, 15  
9
L
H
H
L
L
Write  
L
H
H
L
ACTIVE (Select and activate row)  
(With Auto  
Precharge)  
H
H
L
READ (Select column and start READ burst)  
WRITE (Select column and start new WRITE burst)  
PRECHARGE  
7, 8, 16  
7, 8, 17  
9
L
H
L
t
NOTE: 1. This table applies when CKE was HIGH and CKE is HIGH (see Truth Table 2) and after XSR has been met (if the  
n-1  
n
previous state was self refresh).  
2. This table describes alternate bank operation, except where noted; i.e., the current state is for bank n and the  
commands shown are those allowed to be issued to bank m (assuming that bank m is in such a state that the given  
command is allowable). Exceptions are covered in the notes below.  
3. Current state definitions:  
t
Idle: The bank has been precharged, and RP has been met.  
Row Active: A row in the bank has been activated, and RCD has been met. No data bursts/accesses and  
t
no register accesses are in progress.  
Read: A READ burst has been initiated, with auto precharge disabled, and has not yet terminated  
or been terminated.  
Writ e : A WRITE burst has been initiated, with auto precharge disabled, and has not yet  
terminated or been terminated.  
Read w/Auto  
Precharge Enabled: Starts with registration of a READ command with auto precharge enabled, and ends when  
t
t
RP has been met. Once RP is met, the bank will be in the idle state.  
Write w/Auto  
Precharge Enabled: Starts with registration of a WRITE command with auto precharge enabled, and ends when  
t
t
RP has been met. Once RP is met, the bank will be in the idle state.  
(Continued on next page)  
64Mb: x4, x8, x16 SDRAM  
64MSDRAM_F.p65 – Rev. F; Pub. 1/03  
Micron Technology, Inc., reservesthe right to change productsor specificationswithout notice.  
©2003, Micron Technology, Inc.  
30  
 复制成功!