256Mb: x4, x8, x16 SDRAM
WRITE Operation
Figure 38: WRITE – Continuous Page Burst
T0
T1
T2
T3
T4
T5
Tn + 1
Tn + 2
Tn + 3
( (
) )
( (
) )
t
t
CK
CL
CLK
t
CH
t
t
CKS
CKH
( (
) )
CKE
( (
) )
t
t
CMS
CMH
( (
) )
( (
) )
Command
ACTIVE
NOP
WRITE
t
NOP
NOP
NOP
NOP
BURST TERM
NOP
t
CMH
CMS
( (
) )
( (
) )
DQM
t
AS
t
AH
( (
) )
( (
) )
Column
m
Address
Row
t
AS
t
AH
( (
) )
( (
) )
Row
A10
t
AS
t
AH
( (
) )
( (
) )
BA0, BA1
Bank
Bank
t
t
t
t
t
t
t
t
t
t
DS
DH
DS
DH
DS
DH
DS
DH
DS
DH
( (
) )
( (
) )
DIN
DIN
DIN
DIN
DIN
DQ
t
RCD
Full-page burst
All locations within same row
does not self-terminate.
Use BURST TERMINATE
command to stop.
1, 2
Full page completed
Don’t Care
1. tWR must be satisfied prior to issuing a PRECHARGE command.
2. Page left open; no tRP.
Notes:
PDF: 09005aef8091e6d1
256Mb_sdr.pdf - Rev. R 10/12 EN
Micron Technology, Inc. reserves the right to change products or specifications without notice.
65
© 1999 Micron Technology, Inc. All rights reserved.
MICRON [ MICRON TECHNOLOGY ]
