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MT48LC64M4A2FB1 参数 Datasheet PDF下载

MT48LC64M4A2FB1图片预览
型号: MT48LC64M4A2FB1
PDF下载: 下载PDF文件 查看货源
内容描述: SDR SDRAM [SDR SDRAM]
分类和应用: 动态存储器
文件页数/大小: 86 页 / 3693 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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256Mb: x4, x8, x16 SDRAM  
WRITE Operation  
Figure 39: WRITE – DQM Operation  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
t
t
CL  
CK  
CLK  
CKE  
t
CH  
t
t
CKS  
CKH  
t
t
CMS  
CMH  
Command  
DQM  
ACTIVE  
NOP  
WRITE  
t
NOP  
NOP  
NOP  
NOP  
NOP  
t
CMS CMH  
t
t
t
t
AH  
AS  
Address  
Row  
t
Column m  
AS  
AH  
Enable auto precharge  
Row  
t
A10  
Disable auto precharge  
Bank  
AS  
AH  
BA0, BA1  
Bank  
t
t
t
t
t
t
DS  
DH  
DIN  
DS  
DH  
DS  
DH  
DIN  
DIN  
DQ  
t
Don’t Care  
RCD  
1. For this example, BL = 4.  
Note:  
Burst Read/Single Write  
The burst read/single write mode is entered by programming the write burst mode bit  
(M9) in the mode register to a 1. In this mode, all WRITE commands result in the access  
of a single column location (burst of one), regardless of the programmed burst length.  
READ commands access columns according to the programmed burst length and se-  
quence, just as in the normal mode of operation (M9 = 0).  
PDF: 09005aef8091e6d1  
256Mb_sdr.pdf - Rev. R 10/12 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
66  
© 1999 Micron Technology, Inc. All rights reserved.  
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