ADVANCE
128Mb: x16, x32
MOBILE SDRAM
WRITE – DQM OPERATION1
T0
T1
T2
T3
T4
T5
T6
T7
t
t
CL
CK
CLK
CKE
t
CH
t
t
CKS
CKH
t
t
CMS
CMH
COMMAND
ACTIVE
NOP
WRITE
t
NOP
NOP
NOP
NOP
NOP
t
CMS CMH
DQMU, DQML
t
t
t
t
AH
AS
2
A0-A9, A11
ROW
t
COLUMN m
AS
AH
ENABLE AUTO PRECHARGE
ROW
t
A10
DISABLE AUTO PRECHARGE
BANK
AS
AH
BA0, BA1
BANK
t
t
t
t
t
t
DS
DH
DS
DH
DS
DH
D
IN
m
D
IN m + 2
DIN m + 3
DQ
t
RCD
DON’T CARE
TIMING PARAMETERS
-8
-10
-8
-10
SYMBOL*
MIN
MAX
MIN
1
MAX UNITS
SYMBOL*
MIN
1
MAX
MIN
1
MAX UNITS
t
t
AH
1
2.5
3
ns
ns
ns
ns
ns
ns
ns
CKH
ns
ns
ns
ns
ns
ns
ns
t
t
AS
2.5
3
CKS
2.5
1
2.5
1
t
t
CH
CMH
t
t
CL
3
3
CMS
2.5
1
2.5
1
t
t
CK (3)
8
10
12
25
DH
t
t
CK (2)
10
20
DS
2.5
20
2.5
20
t
t
CK (1)
RCD
*CAS latency indicated in parentheses.
NOTE: 1. For this example, the burst length = 4.
2. x16: A9 and A11 = “Don’t Care”
x32: A8, A9,and A11 = “Don’t Care”
128Mb: x16, x32 Mobile SDRAM
MobileY95W_3V_F.p65 – Rev. F; Pub. 9/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
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