ADVANCE
128Mb: x16, x32
MOBILE SDRAM
WRITE – FULL-PAGE BURST
T0
T1
T2
T3
T4
T5
Tn + 1
Tn + 2
Tn + 3
( (
) )
( (
) )
t
CL
t
CK
CLK
t
CH
t
t
CKS
CKH
( (
) )
CKE
( (
) )
t
t
CMS
CMH
( (
) )
( (
) )
COMMAND
ACTIVE
NOP
WRITE
t
NOP
NOP
NOP
NOP
BURST TERM
NOP
t
CMH
CMS
( (
) )
DQMU, DQML
A0-A9, A11
( (
) )
t
AS
t
AH
( (
) )
( (
) )
1
ROW
COLUMN m
t
AS
t
AH
( (
) )
( (
) )
ROW
A10
t
AS
t
AH
( (
) )
( (
) )
BA0, BA1
BANK
BANK
t
t
t
t
t
t
t
t
t
t
DS
DH
DS
DH
DS
DH
DS
DH
DS
DH
( (
) )
D
IN
m
D
IN m + 1
D
IN m + 2
D
IN m + 3
DIN m - 1
DQ
( (
) )
t
RCD
Full-page burst does not
self-terminate. Can use
BURST TERMINATE
512 (x16) locations within same row
command to stop.2, 3
Full page completed
DON’T CARE
TIMING PARAMETERS
-8
-10
-8
-10
SYMBOL*
MIN
1
MAX
MIN
1
MAX UNITS
SYMBOL*
MIN
1
MAX
MIN
1
MAX UNITS
t
t
AH
ns
ns
ns
ns
ns
ns
ns
CKH
ns
ns
ns
ns
ns
ns
ns
t
t
AS
2.5
3
2.5
3
CKS
2.5
1
2.5
1
t
t
CH
CMH
t
t
CL
3
3
CMS
2.5
1
2.5
1
t
t
CK (3)
8
10
12
25
DH
t
t
CK (2)
10
20
DS
2.5
20
2.5
20
t
t
CK (1)
RCD
*CAS latency indicated in parentheses.
NOTE: 1. x16: A9 and A11 = “Don’t Care”
x32: A8, A9,and A11 = “Don’t Care”
t
2. WR must be satisfied prior to PRECHARGE command.
3. Page left open; no tRP.
128Mb: x16, x32 Mobile SDRAM
MobileY95W_3V_F.p65 – Rev. F; Pub. 9/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
57
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