64Mb: x32
SDRAM
*Stresses greater than those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only, and functional
operation of the device at these or any other conditions
above those indicated in the operational sections of
this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
ABSOLUTEMAXIMUMRATINGS*
Voltage on VDD, VDDQ Supply
Relative to VSS .............................................. -1V to +4.6V
Voltage on Inputs, NC or I/O Pins
Relative to VSS .............................................. -1V to +4.6V
Operating Temperature, TA ............................ 0°C to +70°C
Extended Temperature .......................... -40°C to +85°C
Storage Temperature (plastic) ............ -55°C to +150°C
Power Dissipation ........................................................ 1W
DCELECTRICALCHARACTERISTICSANDOPERATINGCONDITIONS
(Notes: 1, 6, 27; notes appear on page 35) (VDD, VDDQ = +3.3V 0.3V)
PARAMETER/CONDITION
SYMBOL
VDD, VDDQ
VIH
MIN
3
MAX UNITS NOTES
SUPPLY VOLTAGE
3.6
VDD + 0.3
0.8
V
V
V
27
22
22
INPUT HIGH VOLTAGE: Logic 1; All inputs
INPUT LOW VOLTAGE: Logic 0; All inputs
2
VIL
-0.3
INPUT LEAKAGE CURRENT:
Any input 0V ≤ VIN ≤ VDD
(All other pins not under test = 0V)
II
-5
5
µA
OUTPUT LEAKAGE CURRENT: DQs are disabled; 0V ≤ VOUT ≤ VDDQ
IOZ
-5
5
–
µA
V
OUTPUT LEVELS:
VOH
2.4
Output High Voltage (IOUT = -4mA)
Output Low Voltage (IOUT = 4mA)
VOL
–
0.4
V
64Mb: x32 SDRAM
64MSDRAMx32_5.p65 – Rev. B; Pub. 6/02
MicronTechnology,Inc.,reservestherighttochangeproductsorspecificationswithoutnotice.
©2002,MicronTechnology,Inc.
30
MICRON [ MICRON TECHNOLOGY ]
