欢迎访问ic37.com |
会员登录 免费注册
发布采购

MT48LC2M32B2TG 参数 Datasheet PDF下载

MT48LC2M32B2TG图片预览
型号: MT48LC2M32B2TG
PDF下载: 下载PDF文件 查看货源
内容描述: 同步DRAM [SYNCHRONOUS DRAM]
分类和应用: 动态存储器
文件页数/大小: 53 页 / 1810 K
品牌: MICRON [ MICRON TECHNOLOGY ]
 浏览型号MT48LC2M32B2TG的Datasheet PDF文件第25页浏览型号MT48LC2M32B2TG的Datasheet PDF文件第26页浏览型号MT48LC2M32B2TG的Datasheet PDF文件第27页浏览型号MT48LC2M32B2TG的Datasheet PDF文件第28页浏览型号MT48LC2M32B2TG的Datasheet PDF文件第30页浏览型号MT48LC2M32B2TG的Datasheet PDF文件第31页浏览型号MT48LC2M32B2TG的Datasheet PDF文件第32页浏览型号MT48LC2M32B2TG的Datasheet PDF文件第33页  
64Mb: x32  
SDRAM  
NOTE (continued):  
4. AUTO REFRESH, SELF REFRESH, and LOAD MODE REGISTER commands may only be issued when all  
banks are idle.  
5. A BURST TERMINATE command cannot be issued to another bank; it applies to the bank represented  
by the current state only.  
6. All states and sequences not shown are illegal or reserved.  
7. READs or WRITEs to bank m listed in the Command (Action) column include READs or WRITEs with  
auto precharge enabled and READs or WRITEs with auto precharge disabled.  
8. CONCURRENT AUTO PRECHARGE: Bank n will initiate the auto precharge command when its burst has  
been interrupted by bank m’s burst.  
9. Burst in bank n continues as initiated.  
10. For a READ without auto precharge interrupted by a READ (with or without auto precharge), the  
READ to bank m will interrupt the READ on bank n, CAS latency later (Figure 7).  
11. For a READ without auto precharge interrupted by a WRITE (with or without auto precharge), the  
WRITE to bank m will interrupt the READ on bank n when registered (Figures 9 and 10). DQM should  
be used one clock prior to the WRITE command to prevent bus contention.  
12. For a WRITE without auto precharge interrupted by a READ (with or without auto precharge), the  
READ to bank m will interrupt the WRITE on bank n when registered (Figure 17), with the data-out  
appearing CAS latency later. The last valid WRITE to bank n will be data-in registered one clock prior  
to the READ to bank m.  
13. For a WRITE without auto precharge interrupted by a WRITE (with or without auto precharge), the  
WRITE to bank m will interrupt the WRITE on bank n when registered (Figure 15). The last valid WRITE  
to bank n will be data-in registered one clock prior to the READ to bank m.  
14. For a READ with auto precharge interrupted by a READ (with or without auto precharge), the READ to  
bank m will interrupt the READ on bank n, CAS latency later. The PRECHARGE to bank n will begin  
when the READ to bank m is registered (Figure 24).  
15. For a READ with auto precharge interrupted by a WRITE (with or without auto precharge), the  
WRITE to bank m will interrupt the READ on bank n when registered. DQM should be used two  
clocks prior to the WRITE command to prevent bus contention. The PRECHARGE to bank n will  
begin when the WRITE to bank m is registered (Figure 25).  
16. For a WRITE with auto precharge interrupted by a READ (with or without auto precharge), the READ  
to bank m will interrupt the WRITE on bank n when registered, with the data-out appearing CAS  
latency later. The PRECHARGE to bank n will begin after tWR is met, where tWR begins when the  
READ to bank m is registered. The last valid WRITE to bank n will be data-in registered one clock prior  
to the READ to bank m (Figure 26).  
17. For a WRITE with auto precharge interrupted by a WRITE (with or without auto precharge), the WRITE  
to bank m will interrupt the WRITE on bank n when registered. The PRECHARGE to bank n will begin  
after tWR is met, where tWR begins when the WRITE to bank m is registered. The last valid WRITE to  
bank n will be data registered one clock prior to the WRITE to bank m (Figure 27).  
64Mb: x32 SDRAM  
64MSDRAMx32_5.p65 – Rev. B; Pub. 6/02  
MicronTechnology,Inc.,reservestherighttochangeproductsorspecificationswithoutnotice.  
©2002,MicronTechnology,Inc.  
29  
 复制成功!