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MT48LC2M32B2TG 参数 Datasheet PDF下载

MT48LC2M32B2TG图片预览
型号: MT48LC2M32B2TG
PDF下载: 下载PDF文件 查看货源
内容描述: 同步DRAM [SYNCHRONOUS DRAM]
分类和应用: 动态存储器
文件页数/大小: 53 页 / 1810 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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64Mb: x32  
SDRAM  
NOTE (continued):  
Write w/Auto  
Precharge Enabled: Starts with registration of a WRITE command with auto precharge enabled and  
ends when tRP has been met. Once tRP is met, the bank will be in the idle state.  
5. The following states must not be interrupted by any executable command; COMMAND INHIBIT or NOP  
commands must be applied on each positive clock edge during these states.  
Refreshing: Starts with registration of an AUTO REFRESH command and ends when tRC is met.  
Once tRC is met, the SDRAM will be in the all banks idle state.  
Accessing Mode  
Register:  
Starts with registration of a LOAD MODE REGISTER command and ends when  
tMRD has been met. Once tMRD is met, the SDRAM will be in the all banks idle  
state.  
Precharging All: Starts with registration of a PRECHARGE ALL command and ends when tRP is met.  
Once tRP is met, all banks will be in the idle state.  
6. All states and sequences not shown are illegal or reserved.  
7. Not bank-specific; requires that all banks are idle.  
8. May or may not be bank-specific; if all banks are to be precharged, all must be in a valid state for  
precharging.  
9. Not bank-specific; BURST TERMINATE affects the most recent READ or WRITE burst, regardless of bank.  
10. READs or WRITEs listed in the Command (Action) column include READs or WRITEs with auto  
precharge enabled and READs or WRITEs with auto precharge disabled.  
11. Does not affect the state of the bank and acts as a NOP to that bank.  
64Mb: x32 SDRAM  
64MSDRAMx32_5.p65 – Rev. B; Pub. 6/02  
MicronTechnology,Inc.,reservestherighttochangeproductsorspecificationswithoutnotice.  
©2002,MicronTechnology,Inc.  
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