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MT48H16M32LFCM-75L 参数 Datasheet PDF下载

MT48H16M32LFCM-75L图片预览
型号: MT48H16M32LFCM-75L
PDF下载: 下载PDF文件 查看货源
内容描述: 512MB :梅格32 ×16 , 16兆×32移动SDRAM [512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM]
分类和应用: 内存集成电路动态存储器时钟
文件页数/大小: 73 页 / 2407 K
品牌: MICRON [ MICRON TECHNOLOGY ]
 浏览型号MT48H16M32LFCM-75L的Datasheet PDF文件第38页浏览型号MT48H16M32LFCM-75L的Datasheet PDF文件第39页浏览型号MT48H16M32LFCM-75L的Datasheet PDF文件第40页浏览型号MT48H16M32LFCM-75L的Datasheet PDF文件第41页浏览型号MT48H16M32LFCM-75L的Datasheet PDF文件第43页浏览型号MT48H16M32LFCM-75L的Datasheet PDF文件第44页浏览型号MT48H16M32LFCM-75L的Datasheet PDF文件第45页浏览型号MT48H16M32LFCM-75L的Datasheet PDF文件第46页  
512Mb : 32 Me g x 16, 16 Me g x 32 Mo b ile SDRAM  
Tru t h Ta b le s  
Ta b le 7:  
Tru t h Ta b le – Cu rre n t St a t e Ba n k n , Co m m a n d t o Ba n k n  
Notes: 1–6; notes appear below table  
Cu rre n t St a t e  
Any  
CS#  
RAS# CAS# WE# Co m m a n d (Act io n )  
No t e s  
H
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
X
H
L
X
H
H
L
L
H
L
L
H
L
L
H
H
L
L
H
H
X
H
H
H
L
L
H
L
L
H
L
L
L
H
L
L
L
COMMAND INHIBIT (NOP/Continue previous operation)  
NO OPERATION (NOP/Continue previous operation)  
ACTIVE (Select and activate row)  
Idle  
L
7
7
AUTO REFRESH  
L
LOAD MODE REGISTER  
L
8
PRECHARGE  
Row active  
H
H
L
9
READ (Select column and start READ burst)  
WRITE (Select column and start WRITE burst)  
PRECHARGE (Deactivate row in bank or banks)  
READ (Select column and start new READ burst)  
WRITE (Select column and start WRITE burst)  
PRECHARGE (Truncate READ burst, start PRECHARGE)  
BURST TERMINATE  
9
10  
9
Read  
(auto precharge  
disabled)  
H
H
L
9
10  
11  
9
H
H
H
L
Write  
(auto precharge  
disabled)  
READ (Select column and start READ burst)  
WRITE (Select column and start new WRITE burst)  
PRECHARGE (Truncate WRITE burst, start PRECHARGE)  
BURST TERMINATE  
9
10  
11  
H
Notes: 1. This table applies when CKEn-1 was HIGH and CKEn is HIGH (see Table 6 on page 41) and  
t
after XSR has been met (if the previous state was self refresh).  
2. This table is bank-specific, except where noted; i.e., the current state is for a specific bank  
and the commands shown are those allowed to be issued to that bank when in that state.  
Exceptions are covered in the notes below.  
3. Current state definitions:  
t
Idle:  
The bank has been precharged, and RP has been met.  
t
Row active:  
A row in the bank has been activated, and RCD has been met. No data  
bursts/accesses and no register accesses are in progress.  
Read:  
A READ burst has been initiated, with auto precharge disabled, and has  
not yet terminated or been terminated.  
Write:  
A WRITE burst has been initiated, with auto precharge disabled, and has  
not yet terminated or been terminated.  
4. The following states must not be interrupted by a command issued to the same bank. COM-  
MAND INHIBIT or NOP commands, or allowable commands to the other bank should be  
issued on any clock edge occurring during these states. Allowable commands to the other  
bank are determined by its current state and Table 7, and according to Table 8 on page 44.  
Precharging:  
Starts with registration of a PRECHARGE command and ends when  
t
tRP is met. Once RP is met, the bank will be in the idle state.  
t
Row activating:  
Starts with registration of an ACTIVE command and ends when RCD  
t
is met. Once RCD is met, the bank will be in the row active state.  
Read w/auto-  
precharge enabled:  
Starts with registration of a READ command with auto precharge  
enabled and ends when RP has been met. Once RP is met, the bank  
will be in the idle state.  
t
t
Write w/auto-  
precharge enabled:  
Starts with registration of a WRITE command with auto precharge  
t
enabled and ends whentRP has been met. Once RP is met, the bank  
will be in the idle state.  
PDF: 09005aef81ca5de4/Source: 09005aef81ca5e03  
MT48H32M16LF_1.fm - Rev. H 6/07 EN  
Micron Technology, Inc., reserves the right to change products or specifications without notice.  
42  
©2005 Micron Technology, Inc. All rights reserved.  
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