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MT48H16M32LFCM-75L 参数 Datasheet PDF下载

MT48H16M32LFCM-75L图片预览
型号: MT48H16M32LFCM-75L
PDF下载: 下载PDF文件 查看货源
内容描述: 512MB :梅格32 ×16 , 16兆×32移动SDRAM [512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM]
分类和应用: 内存集成电路动态存储器时钟
文件页数/大小: 73 页 / 2407 K
品牌: MICRON [ MICRON TECHNOLOGY ]
 浏览型号MT48H16M32LFCM-75L的Datasheet PDF文件第40页浏览型号MT48H16M32LFCM-75L的Datasheet PDF文件第41页浏览型号MT48H16M32LFCM-75L的Datasheet PDF文件第42页浏览型号MT48H16M32LFCM-75L的Datasheet PDF文件第43页浏览型号MT48H16M32LFCM-75L的Datasheet PDF文件第45页浏览型号MT48H16M32LFCM-75L的Datasheet PDF文件第46页浏览型号MT48H16M32LFCM-75L的Datasheet PDF文件第47页浏览型号MT48H16M32LFCM-75L的Datasheet PDF文件第48页  
512Mb : 32 Me g x 16, 16 Me g x 32 Mo b ile SDRAM  
Tru t h Ta b le s  
Ta b le 8:  
Tru t h Ta b le – Cu rre n t St a t e Ba n k n , Co m m a n d t o Ba n k m  
Notes: 1–6; notes appear below and on next page  
Cu rre n t St a t e  
CS#  
RAS# CAS# WE# Co m m a n d (Act io n )  
No t e s  
Any  
H
L
X
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
X
H
X
L
X
H
X
H
L
X
H
X
H
H
L
COMMAND INHIBIT (NOP/Continue previous operation)  
NO OPERATION (NOP/Continue previous operation)  
Any command otherwise allowed to bank m  
ACTIVE (Select and activate row)  
Idle  
Row  
activating,  
active, or  
precharging  
H
H
L
7
7
READ (Select column and start READ burst)  
WRITE (Select column and start WRITE burst)  
PRECHARGE  
L
H
H
L
L
Read  
(auto precharge  
disabled)  
L
H
H
L
ACTIVE (Select and activate row)  
H
H
L
7, 8  
7, 9  
10  
READ (Select column and start new READ burst)  
WRITE (Select column and start WRITE burst)  
PRECHARGE  
L
H
H
L
L
Write  
(auto precharge  
disabled)  
L
H
H
L
ACTIVE (Select and activate row)  
H
H
L
7, 11  
7, 12  
10  
READ (Select column and start READ burst)  
WRITE (Select column and start new WRITE burst)  
PRECHARGE  
L
H
H
L
L
Read  
(with auto  
precharge)  
L
H
H
L
ACTIVE (Select and activate row)  
H
H
L
7, 13, 14  
7, 13, 15  
10  
READ (Select column and start new READ burst)  
WRITE (Select column and start WRITE burst)  
PRECHARGE  
L
H
H
L
L
Write  
(with auto  
precharge)  
L
H
H
L
ACTIVE (Select and activate row)  
H
H
L
7, 13, 16  
7, 13, 17  
10  
READ (Select column and start READ burst)  
WRITE (Select column and start new WRITE burst)  
PRECHARGE  
L
H
L
Notes: 1. This table applies when CKEn-1 was HIGH and CKEn is HIGH (Table 6 on page 41) and after  
tXSR has been met (if the previous state was self refresh).  
2. This table describes alternate bank operation, except where noted; i.e., the current state is  
for bank n and the commands shown are those allowed to be issued to bank m (assuming  
that bank m is in such a state that the given command is allowable). Exceptions are covered  
in the notes below.  
3. Current state definitions:  
t
Idle:  
The bank has been precharged, and RP has been met.  
t
Row active:  
A row in the bank has been activated, and RCD has been met. No  
data bursts/accesses and no register accesses are in progress.  
Read:  
A READ burst has been initiated, with auto precharge disabled, and  
has not yet terminated or been terminated.  
Write:  
A WRITE burst has been initiated, with auto precharge disabled, and  
has not yet terminated or been terminated.  
Read w/auto-  
precharge enabled:  
Starts with registration of a READ command with auto precharge  
enabled and ends when RP has been met. Once RP is met, the bank  
will be in the idle state.  
t
t
Write w/auto-  
precharge enabled:  
Starts with registration of a WRITE command with auto precharge  
t
enabled and ends whentRP has been met. Once RP is met, the bank  
will be in the idle state.  
4. AUTO REFRESH, SELF REFRESH and LOAD MODE REGISTER commands may only be issued  
when all banks are idle.  
PDF: 09005aef81ca5de4/Source: 09005aef81ca5e03  
MT48H32M16LF_1.fm - Rev. H 6/07 EN  
Micron Technology, Inc., reserves the right to change products or specifications without notice.  
44  
©2005 Micron Technology, Inc. All rights reserved.  
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