512Mb : 32 Me g x 16, 16 Me g x 32 Mo b ile SDRAM
Ele ct rica l Sp e cifica t io n s
Ele ct rica l Sp e cifica t io n s
Ab so lu t e Ma xim u m Ra t in g s
Stresses greater than those listed in Table 9 may cause permanent damage to the device.
This is a stress rating only, and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
Ta b le 9:
Ab so lu t e Ma xim u m Ra t in g s
Vo lt a g e /Te m p e ra t u re
Min
Ma x
Un it s
–0.3
–0.3
–55
+2.7
+2.7
+150
V
Voltage on VDD/VDDQ supply relative to VSS
Voltage on inputs, NC or I/O balls relative to VSS
Storage temperature plastic
°C
Ta b le 10:
DC Ele ct rica l Ch a ra ct e rist ics a n d Op e ra t in g Co n d it io n s
Notes: 1, 5, 6; notes appear on pages 51–52
Pa ra m e t e r/Co n d it io n
Sym b o l
Min
Ma x
Un it s
No t e s
VDD
VDDQ
VIH
1.7
1.7
1.95
1.95
V
V
Supply voltage
I/O supply voltage
0.8 × VDDQ VDDQ + 0.3
V
22
22
28
28
Input high voltage: Logic 1; All inputs
Input low voltage: Logic 0; All inputs
Output high voltage:
VIL
–0.3
0.9 × VDDQ
–
+0.3
–
V
VOH
VOL
II
V
0.2
1.0
V
Output low voltage:
–1.0
µA
Input leakage current:
Any input 0V ≤ VIN ≤ VDD (All other balls not under test = 0V)
Op e ra t in g t e m p e ra t u re
Commercial
Industrial
TA
TA
0
–40
+70
+85
°C
PDF: 09005aef81ca5de4/Source: 09005aef81ca5e03
MT48H32M16LF_1.fm - Rev. H 6/07 EN
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2005 Micron Technology, Inc. All rights reserved.
46
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