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MT41J256M4 参数 Datasheet PDF下载

MT41J256M4图片预览
型号: MT41J256M4
PDF下载: 下载PDF文件 查看货源
内容描述: DDR3 SDRAM MT41J256M4 â ????梅格32 ×4× 8银行MT41J128M8 â ????梅格16 ×8× 8银行MT41J64M16 â ???? 8梅格×16× 8银行 [DDR3 SDRAM MT41J256M4 – 32 Meg x 4 x 8 banks MT41J128M8 – 16 Meg x 8 x 8 banks MT41J64M16 – 8 Meg x 16 x 8 banks]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 214 页 / 2938 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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1Gb: x4, x8, x16 DDR3 SDRAM  
Features  
Figure 51: MRS to MRS Command Timing (tMRD) ......................................................................................... 136  
Figure 52: MRS to nonMRS Command Timing (tMOD) .................................................................................. 130  
Figure 53: Mode Register ± (MR±) Definitions ................................................................................................ 138  
Figure 54: READ Latency .............................................................................................................................. 14±  
Figure 55: Mode Register 1 (MR1) Definition ................................................................................................. 141  
Figure 56: READ Latency (AL = 5, CL = 6) ....................................................................................................... 144  
Figure 50: Mode Register 2 (MR2) Definition ................................................................................................. 145  
Figure 58: CAS Write Latency ........................................................................................................................ 145  
Figure 59: Mode Register 3 (MR3) Definition ................................................................................................. 140  
Figure 6±: Multipurpose Register (MPR) Block Diagram ................................................................................. 148  
Figure 61: MPR System Read Calibration with BL8: Fixed Burst Order Single Readout ..................................... 151  
Figure 62: MPR System Read Calibration with BL8: Fixed Burst Order, Back-to-Back Readout .......................... 152  
Figure 63: MPR System Read Calibration with BC4: Lower Nibble, Then Upper Nibble .................................... 153  
Figure 64: MPR System Read Calibration with BC4: Upper Nibble, Then Lower Nibble .................................... 154  
Figure 65: ZQ CALIBRATION Timing (ZQCL and ZQCS) ................................................................................. 156  
Figure 66: Example: Meeting tRRD (MIN) and tRCD (MIN) ............................................................................. 150  
Figure 60: Example: tFAW ............................................................................................................................. 158  
Figure 68: READ Latency .............................................................................................................................. 159  
Figure 69: Consecutive READ Bursts (BL8) .................................................................................................... 161  
Figure 0±: Consecutive READ Bursts (BC4) .................................................................................................... 161  
Figure 01: Nonconsecutive READ Bursts ....................................................................................................... 162  
Figure 02: READ (BL8) to WRITE (BL8) .......................................................................................................... 162  
Figure 03: READ (BC4) to WRITE (BC4) OTF .................................................................................................. 163  
Figure 04: READ to PRECHARGE (BL8) .......................................................................................................... 163  
Figure 05: READ to PRECHARGE (BC4) ......................................................................................................... 164  
Figure 06: READ to PRECHARGE (AL = 5, CL = 6) ........................................................................................... 164  
Figure 00: READ with Auto Precharge (AL = 4, CL = 6) ..................................................................................... 164  
Figure 08: Data Output Timing – tDQSQ and Data Valid Window .................................................................... 166  
Figure 09: Data Strobe Timing – READs ......................................................................................................... 160  
Figure 8±: Method for Calculating tLZ and tHZ ............................................................................................... 168  
Figure 81: tRPRE Timing ............................................................................................................................... 168  
Figure 82: tRPST Timing ............................................................................................................................... 169  
Figure 83: tWPRE Timing .............................................................................................................................. 101  
Figure 84: tWPST Timing .............................................................................................................................. 101  
Figure 85: WRITE Burst ................................................................................................................................ 102  
Figure 86: Consecutive WRITE (BL8) to WRITE (BL8) ..................................................................................... 103  
Figure 80: Consecutive WRITE (BC4) to WRITE (BC4) via OTF ........................................................................ 103  
Figure 88: Nonconsecutive WRITE to WRITE ................................................................................................. 104  
Figure 89: WRITE (BL8) to READ (BL8) .......................................................................................................... 104  
Figure 9±: WRITE to READ (BC4 Mode Register Setting) ................................................................................. 105  
Figure 91: WRITE (BC4 OTF) to READ (BC4 OTF) ........................................................................................... 106  
Figure 92: WRITE (BL8) to PRECHARGE ........................................................................................................ 100  
Figure 93: WRITE (BC4 Mode Register Setting) to PRECHARGE ...................................................................... 100  
Figure 94: WRITE (BC4 OTF) to PRECHARGE ................................................................................................ 108  
Figure 95: Data Input Timing ........................................................................................................................ 109  
Figure 96: Self Refresh Entry/Exit Timing ...................................................................................................... 181  
Figure 90: Active Power-Down Entry and Exit ................................................................................................ 185  
Figure 98: Precharge Power-Down (Fast-Exit Mode) Entry and Exit ................................................................. 186  
Figure 99: Precharge Power-Down (Slow-Exit Mode) Entry and Exit ................................................................ 186  
Figure 1±±: Power-Down Entry After READ or READ with Auto Precharge (RDAP) ........................................... 180  
Figure 1±1: Power-Down Entry After WRITE .................................................................................................. 180  
Figure 1±2: Power-Down Entry After WRITE with Auto Precharge (WRAP) ...................................................... 188  
PDF: 09005aef826aa906  
1Gb_DDR3_SDRAM.pdf - Rev. L 03/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
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