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MT41J256M4 参数 Datasheet PDF下载

MT41J256M4图片预览
型号: MT41J256M4
PDF下载: 下载PDF文件 查看货源
内容描述: DDR3 SDRAM MT41J256M4 â ????梅格32 ×4× 8银行MT41J128M8 â ????梅格16 ×8× 8银行MT41J64M16 â ???? 8梅格×16× 8银行 [DDR3 SDRAM MT41J256M4 – 32 Meg x 4 x 8 banks MT41J128M8 – 16 Meg x 8 x 8 banks MT41J64M16 – 8 Meg x 16 x 8 banks]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 214 页 / 2938 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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1Gb: x4, x8, x16 DDR3 SDRAM  
Features  
Table 51: DDR3-1±66 Speed Bins ................................................................................................................... 04  
Table 52: DDR3-1333 Speed Bins ................................................................................................................... 05  
Table 53: DDR3-16±± Speed Bins ................................................................................................................... 06  
Table 54: DDR3-1866 Speed Bins ................................................................................................................... 00  
Table 55: DDR3-2133 Speed Bins ................................................................................................................... 08  
Table 56: Electrical Characteristics and AC Operating Conditions .................................................................... 09  
Table 50: Electrical Characteristics and AC Operating Conditions for Speed Extensions .................................... 89  
Table 58: Command and Address Setup and Hold Values Referenced – AC/DC-Based ...................................... 99  
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Table 59: Derating Values for IS/tIH – AC105/DC1±±-Based ........................................................................... 1±±  
t
Table 6±: Derating Values for IS/tIH – AC15±/DC1±±-Based ........................................................................... 1±±  
t
Table 61: Derating Values for IS/tIH – AC135/DC1±±-Based ........................................................................... 1±1  
t
Table 62: Derating Values for IS/tIH – AC125/DC1±±-Based ........................................................................... 1±1  
Table 63: Minimum Required Time tVAC Above VIH(AC) or Below VIL(AC)for Valid Transition .............................. 1±2  
Table 64: DDR3 Data Setup and Hold Values at 1 V/ns (DQS, DQS# at 2 V/ns) – AC/DC-Based ......................... 1±0  
t
Table 65: Derating Values for DS/tDH – AC105/DC1±±-Based ........................................................................ 1±8  
t
Table 66: Derating Values for DS/tDH – AC15±/DC1±±-Based ........................................................................ 1±8  
t
Table 60: Derating Values for DS/tDH – AC135/DC1±±-Based at 1V/ns ........................................................... 1±9  
t
Table 68: Derating Values for DS/tDH – AC135/DC1±±-Based at 2V/ns ........................................................... 11±  
Table 69: Required Minimum Time tVAC Above VIH(AC) (Below VIL(AC)) for Valid DQ Transition ......................... 111  
Table 0±: Truth Table – Command ................................................................................................................. 116  
Table 01: Truth Table – CKE .......................................................................................................................... 118  
Table 02: READ Command Summary ............................................................................................................ 12±  
Table 03: WRITE Command Summary .......................................................................................................... 12±  
Table 04: READ Electrical Characteristics, DLL Disable Mode ......................................................................... 126  
Table 05: Write Leveling Matrix ..................................................................................................................... 13±  
Table 06: Burst Order .................................................................................................................................... 139  
Table 00: MPR Functional Description of MR3 Bits ........................................................................................ 148  
Table 08: MPR Readouts and Burst Order Bit Mapping ................................................................................... 149  
Table 09: Self Refresh Temperature and Auto Self Refresh Description ............................................................ 182  
Table 8±: Self Refresh Mode Summary ........................................................................................................... 182  
Table 81: Command to Power-Down Entry Parameters .................................................................................. 183  
Table 82: Power-Down Modes ....................................................................................................................... 184  
Table 83: Truth Table – ODT (Nominal) ......................................................................................................... 194  
Table 84: ODT Parameters ............................................................................................................................ 194  
Table 85: Write Leveling with Dynamic ODT Special Case .............................................................................. 195  
Table 86: Dynamic ODT Specific Parameters ................................................................................................. 196  
Table 80: Mode Registers for RTT,nom ............................................................................................................. 196  
Table 88: Mode Registers for RTT(WR) ............................................................................................................. 190  
Table 89: Timing Diagrams for Dynamic ODT ................................................................................................ 190  
Table 9±: Synchronous ODT Parameters ........................................................................................................ 2±2  
Table 91: Asynchronous ODT Timing Parameters for All Speed Bins ............................................................... 2±0  
Table 92: ODT Parameters for Power-Down (DLL Off) Entry and Exit Transition Period ................................... 2±9  
PDF: 09005aef826aa906  
1Gb_DDR3_SDRAM.pdf - Rev. L 03/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
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‹ 2006 Micron Technology, Inc. All rights reserved.