1Gb: x4, x8, x16 DDR3 SDRAM
Electrical Specifications – IDD Specifications and Conditions
Electrical Specifications – IDD Specifications and Conditions
Within the following IDD measurement tables, the following definitions and conditions
are used, unless stated otherwise:
• LOW: VIN ≤VIL(AC)max; HIGH: VIN ≥VIH(AC)min
• Midlevel: Inputs are VREF = VDD/2.
• RON set to RZQ/0 (34Ωꢀꢁ
.
• RTT,nom set to RZQ/6 (4±Ωꢀꢁ
• RTT(WR) set to RZQ/2 (12±Ωꢀꢁ
• QOFF is enabled in MR1.
• ODT is enabled in MR1 (RTT,nom) and MR2 (RTT(WR)).
• TDQS is disabled in MR1.
• External DQ/DQS/DM load resistor is 25Ω to VDDQ/2.
• Burst lengths are BL8 fixed.
• AL equals ± (except in IDD0).
• IDD specifications are tested after the device is properly initialized.
• Input slew rate is specified by AC parametric test conditions.
• Optional ASR is disabled.
• Read burst type uses nibble sequential (MR±[3] = ±).
• Loop patterns must be executed at least once before current measurements begin.
Table 9: Timing Parameters Used for IDD Measurements – Clock Units
DDR3-800
-25E -25
DDR3-1066
DDR3-1333
-15E -15
DDR3-1600
-125E -125
DDR3-1866 DDR3-2133
-187E -187
-107
-093
IDD
Parameter
5-5-5 6-6-6 7-7-7 8-8-8 9-9-9 10-10-10 10-10-10 11-11-11 13-13-13
14-14-14 Unit
tCK (MIN) IDD
2.5
1.875
1.5
1.25
1.071
13
0.938
14
ns
CL IDD
5
5
6
6
7
7
8
8
9
9
10
10
34
24
10
20
30
4
10
10
38
28
10
24
32
5
11
11
39
28
11
24
32
5
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
tRCD (MIN) IDD
tRC (MIN) IDD
tRAS (MIN) IDD
tRP (MIN)
13
14
20
15
5
21
15
6
27
20
7
28
20
8
33
24
9
45
50
32
36
13
14
tFAW x4, x8
16
20
4
16
20
4
20
27
4
20
27
4
20
30
4
26
27
x16
33
38
tRRD
IDD
x4, x8
x16
5
6
4
4
6
6
5
5
6
6
6
7
tRFC
1Gb
2Gb
4Gb
8Gb
44
64
104
140
44
64
104
140
59
86
59
86
139
187
74
107
174
234
74
107
174
234
88
128
208
280
88
128
208
280
103
150
243
328
118
172
279
375
139
187
PDF: 09005aef826aa906
1Gb_DDR3_SDRAM.pdf - Rev. L 03/13 EN
Micron Technology, Inc. reserves the right to change products or specifications without notice.
34
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