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MT41J256M4 参数 Datasheet PDF下载

MT41J256M4图片预览
型号: MT41J256M4
PDF下载: 下载PDF文件 查看货源
内容描述: DDR3 SDRAM MT41J256M4 â ????梅格32 ×4× 8银行MT41J128M8 â ????梅格16 ×8× 8银行MT41J64M16 â ???? 8梅格×16× 8银行 [DDR3 SDRAM MT41J256M4 – 32 Meg x 4 x 8 banks MT41J128M8 – 16 Meg x 8 x 8 banks MT41J64M16 – 8 Meg x 16 x 8 banks]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 214 页 / 2938 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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1Gb: x4, x8, x16 DDR3 SDRAM  
Electrical Specifications – IDD Specifications and Conditions  
Electrical Specifications – IDD Specifications and Conditions  
Within the following IDD measurement tables, the following definitions and conditions  
are used, unless stated otherwise:  
• LOW: VIN VIL(AC)max; HIGH: VIN VIH(AC)min  
• Midlevel: Inputs are VREF = VDD/2.  
• RON set to RZQ/0 (34Ωꢀꢁ  
.
• RTT,nom set to RZQ/6 (4±Ωꢀꢁ  
• RTT(WR) set to RZQ/2 (12±Ωꢀꢁ  
• QOFF is enabled in MR1.  
• ODT is enabled in MR1 (RTT,nom) and MR2 (RTT(WR)).  
• TDQS is disabled in MR1.  
• External DQ/DQS/DM load resistor is 25Ω to VDDQ/2.  
• Burst lengths are BL8 fixed.  
• AL equals ± (except in IDD0).  
• IDD specifications are tested after the device is properly initialized.  
• Input slew rate is specified by AC parametric test conditions.  
• Optional ASR is disabled.  
• Read burst type uses nibble sequential (MR±[3] = ±).  
• Loop patterns must be executed at least once before current measurements begin.  
Table 9: Timing Parameters Used for IDD Measurements – Clock Units  
DDR3-800  
-25E -25  
DDR3-1066  
DDR3-1333  
-15E -15  
DDR3-1600  
-125E -125  
DDR3-1866 DDR3-2133  
-187E -187  
-107  
-093  
IDD  
Parameter  
5-5-5 6-6-6 7-7-7 8-8-8 9-9-9 10-10-10 10-10-10 11-11-11 13-13-13  
14-14-14 Unit  
tCK (MIN) IDD  
2.5  
1.875  
1.5  
1.25  
1.071  
13  
0.938  
14  
ns  
CL IDD  
5
5
6
6
7
7
8
8
9
9
10  
10  
34  
24  
10  
20  
30  
4
10  
10  
38  
28  
10  
24  
32  
5
11  
11  
39  
28  
11  
24  
32  
5
CK  
CK  
CK  
CK  
CK  
CK  
CK  
CK  
CK  
CK  
CK  
CK  
CK  
tRCD (MIN) IDD  
tRC (MIN) IDD  
tRAS (MIN) IDD  
tRP (MIN)  
13  
14  
20  
15  
5
21  
15  
6
27  
20  
7
28  
20  
8
33  
24  
9
45  
50  
32  
36  
13  
14  
tFAW x4, x8  
16  
20  
4
16  
20  
4
20  
27  
4
20  
27  
4
20  
30  
4
26  
27  
x16  
33  
38  
tRRD  
IDD  
x4, x8  
x16  
5
6
4
4
6
6
5
5
6
6
6
7
tRFC  
1Gb  
2Gb  
4Gb  
8Gb  
44  
64  
104  
140  
44  
64  
104  
140  
59  
86  
59  
86  
139  
187  
74  
107  
174  
234  
74  
107  
174  
234  
88  
128  
208  
280  
88  
128  
208  
280  
103  
150  
243  
328  
118  
172  
279  
375  
139  
187  
PDF: 09005aef826aa906  
1Gb_DDR3_SDRAM.pdf - Rev. L 03/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
34  
‹ 2006 Micron Technology, Inc. All rights reserved.  
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