1Gb: x4, x8, x16 DDR3 SDRAM
Thermal Characteristics
Thermal Characteristics
Table 8: Thermal Characteristics
Parameter/Condition
Value
0 to +85
0 to +95
–40 to +85
–40 to +95
–40 to +85
–40 to +105
3.2
Units
°C
Symbol
TC
Notes
1, 2, 3
1, 2, 3, 4
1, 2, 3
1, 2, 3, 4
1, 2, 3
1, 2, 3, 4
5
Operating case temperature -
Commercial
°C
TC
Operating case temperature -
Industrial
°C
TC
°C
TC
Operating case temperature -
Automotive
°C
TC
°C
TC
Junction-to-case
(TOP)
78-ball “HX”
°C/W
ΘJC
78-ball “JP” -
F Rev
4.9
78-ball “JP” -
G Rev
tbd
86-ball “BY”
96-ball “LA”
96-ball “JT”
2.8
2.8
tbd
1. MAX operating case temperature. TC is measured in the center of the package.
Notes:
2. A thermal solution must be designed to ensure the DRAM device does not exceed the
maximum TC during operation.
3. Device functionality is not guaranteed if the DRAM device exceeds the maximum TC dur-
ing operation.
4. If TC exceeds 85°C, the DRAM must be refreshed externally at 2x refresh, which is a 3.9μs
interval refresh rate. The use of SRT or ASR (if available) must be enabled.
5. The thermal resistance data is based off of a number of samples from multiple lots and
should be viewed as a typical number.
PDF: 09005aef826aa906
1Gb_DDR3_SDRAM.pdf - Rev. L 03/13 EN
Micron Technology, Inc. reserves the right to change products or specifications without notice.
32
2006 Micron Technology, Inc. All rights reserved.
MICRON [ MICRON TECHNOLOGY ]
