1Gb: x4, x8, x16 DDR3 SDRAM
Electrical Specifications
Electrical Specifications
Absolute Ratings
Stresses greater than those listed in Table 6 may cause permanent damage to the device.
This is a stress rating only, and functional operation of the device at these or any other
conditions outside those indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating conditions for extended periods
may adversely affect reliability.
Table 6: Absolute Maximum Ratings
Symbol
VDD
Parameter
VDD supply voltage relative to VSS
VDD supply voltage relative to VSSQ
Min
–0.4
–0.4
–0.4
0
Max
1.975
1.975
1.975
95
Unit
V
Notes
1
VDDQ
V
VIN, VOUT Voltage on any pin relative to VSS
V
TC
Operating case temperature - Commercial
Operating case temperature - Industrial
Operating case temperature - Automotive
Storage temperature
°C
°C
°C
°C
2, 3
2, 3
2, 3
–40
–40
–55
95
105
TSTG
150
1. VDD and VDDQ must be within 300mV of each other at all times, and VREF must not be
Notes:
greater than 0.6 × VDDQ. When VDD and VDDQ are <500mV, VREF can be ≤300mV.
2. MAX operating case temperature. TC is measured in the center of the package.
3. Device functionality is not guaranteed if the DRAM device exceeds the maximum TC dur-
ing operation.
PDF: 09005aef826aa906
1Gb_DDR3_SDRAM.pdf - Rev. L 03/13 EN
Micron Technology, Inc. reserves the right to change products or specifications without notice.
30
2006 Micron Technology, Inc. All rights reserved.
MICRON [ MICRON TECHNOLOGY ]
