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MT41J256M4 参数 Datasheet PDF下载

MT41J256M4图片预览
型号: MT41J256M4
PDF下载: 下载PDF文件 查看货源
内容描述: DDR3 SDRAM MT41J256M4 â ????梅格32 ×4× 8银行MT41J128M8 â ????梅格16 ×8× 8银行MT41J64M16 â ???? 8梅格×16× 8银行 [DDR3 SDRAM MT41J256M4 – 32 Meg x 4 x 8 banks MT41J128M8 – 16 Meg x 8 x 8 banks MT41J64M16 – 8 Meg x 16 x 8 banks]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 214 页 / 2938 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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1Gb: x4, x8, x16 DDR3 SDRAM  
Mode Register 0 (MR0)  
Figure 52: MRS to nonMRS Command Timing (tMOD)  
T0  
T1  
T2  
Ta0  
Ta1  
Ta2  
CK#  
CK  
non  
MRS  
NOP  
NOP  
NOP  
NOP  
Command  
MRS  
tMOD  
Address  
CKE  
Valid  
Valid  
Valid  
Old  
setting  
New  
setting  
Updating setting  
Indicates break  
in time scale  
Don’t Care  
1. Prior to issuing the MRS command, all banks must be idle (they must be precharged, tRP  
must be satisfied, and no data bursts can be in progress).  
Notes:  
2. Prior to Ta2 when tMOD (MIN) is being satisfied, no commands (except NOP/DES) may be  
issued.  
3. If RTT was previously enabled, ODT must be registered LOW at T0 so that ODTL is satis-  
fied prior to Ta1. ODT must also be registered LOW at each rising CK edge from T0 until  
tMODmin is satisfied at Ta2.  
4. CKE must be registered HIGH from the MRS command until tMRSPDEN (MIN), at which  
time power-down may occur (see Power-Down Mode (page 183)).  
Mode Register 0 (MR0)  
The base register, MR±, is used to define various DDR3 SDRAM modes of operation.  
These definitions include the selection of a burst length, burst type, CAS latency, oper-  
ating mode, DLL RESET, write recovery, and precharge power-down mode, as shown in  
Figure 53 (page 138).  
Burst Length  
Burst length is defined by MR±[1: ±]. Read and write accesses to the DDR3 SDRAM are  
burst-oriented, with the burst length being programmable to 4 (chop mode), 8 (fixed),  
or selectable using A12 during a READ/WRITE command (on-the-fly). The burst length  
determines the maximum number of column locations that can be accessed for a given  
READ or WRITE command. When MR±[1:±] is set to ±1 during a READ/WRITE com-  
mand, if A12 = ±, then BC4 (chop) mode is selected. If A12 = 1, then BL8 mode is selec-  
ted. Specific timing diagrams, and turnaround between READ/WRITE, are shown in the  
READ/WRITE sections of this document.  
When a READ or WRITE command is issued, a block of columns equal to the burst  
length is effectively selected. All accesses for that burst take place within this block,  
meaning that the burst will wrap within the block if a boundary is reached. The block is  
uniquely selected by A[i:2] when the burst length is set to 4 and by A[i:3] when the burst  
length is set to 8 (where Ai is the most significant column address bit for a given config-  
uration). The remaining (least significant) address bit(s) is (are) used to select the start-  
PDF: 09005aef826aa906  
1Gb_DDR3_SDRAM.pdf - Rev. L 03/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
137  
‹ 2006 Micron Technology, Inc. All rights reserved.  
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