2 MEG x 16
ASYNC/PAGE/BURST FLASH MEMORY
TWO-CYCLE PROGRAMMING/ERASE OPERATION
VIH
VIL
A0–A20
VALID ADDRESS
VALID ADDRESS
t
VALID ADDRESS
t
t
t
AVS
AVH
AS
AH
t
VPH
VIH
VIL
ADV#
CE#
t
t
VP
VS
VIH
VIL
t
t
WOS
CS
t
CH
VIH
VIL
t
WPH
OE#
t
WP
VIH
VIL
VIH
VIL
WE#
t
CMD
WB
CMD/
DATA
CMD/
DATA
High-Z
STATUS
DQ0–DQ15
t
RS
t
DS
t
CH
VIH
t
t
RST#
WP#
RHH
RHS
VIL
VIH
VIL
t
t
VPPH
VPS
VIPPH
VIPPLK
VIL
VPP
UNDEFINED
WRITE TIMING PARAMETERS
-70/-80
-70/-80
SYMBOL
MIN
150
0
MAX
UNITS
ns
SYMBOL
MIN
1.5
3
MAX
UNITS
ns
t
t
t
t
t
t
t
t
t
t
t
RS
AH
t
CS
ns
AVH
WPH
VPH
RHS
VPS
ns
t
WP
70
10
70
70
70
10
0
ns
30
10
0
ns
t
VP
ns
ns
t
DS
ns
ns
t
AS
ns
200
50
0
ns
t
VS
ns
WOS
RHH
VPPH
WB
ns
t
AVS
ns
ns
t
CH
ns
0
ns
t
t
DH
0
ns
AA + 50
ns
2 Meg x 16 Async/Page/Burst Flash Memory
MT28F322D20FH_4.p65 – Rev. 4, Pub. 7/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
39
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