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MT28F322D18FH-80BET 参数 Datasheet PDF下载

MT28F322D18FH-80BET图片预览
型号: MT28F322D18FH-80BET
PDF下载: 下载PDF文件 查看货源
内容描述: FL灰内存 [FLASH MEMORY]
分类和应用:
文件页数/大小: 44 页 / 519 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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2 MEG x 16  
ASYNC/PAGE/BURST FLASH MEMORY  
Table 15  
CFI  
OFFSET  
00  
DATA  
2Ch  
DESCRIPTION  
Manufacturer code  
01  
B4h  
Top boot block device code  
B5h  
Bottom boot block device code  
Reserved  
02 – 0F  
reserved  
10, 11 0051, 0052 “QR”  
12 0059 “Y”  
13, 14 0003, 0000 Primary OEM command set  
15, 16 0039, 0000 Address for primary extended table  
17, 18 0000, 0000 Alternate OEM command set  
19, 1A 0000, 0000 Address for OEM extended table  
1B  
1C  
1D  
1E  
1F  
0017  
0022  
00B4  
00C6  
0003  
0000  
VCC MIN for Erase/Write; Bit7–Bit4 Volts in BCD; Bit3–Bit0 100mV in BCD  
VCC MAX for Erase/Write; Bit7–Bit4 Volts in BCD; Bit3–Bit0 100mV in BCD  
VPP MIN for Erase/Write; Bit7–Bit4 Volts in Hex; Bit3–Bit0 100mV in BCD  
VPP MAX for Erase/Write; Bit7–Bit4 Volts in Hex; Bit3–Bit0 100mV in BCD  
Typical timeout for single byte/word program, 2n µs, 0000 = not supported  
20  
Typical timeout for maximum size multiple byte/word program, 2n µs, 0000 = not  
supported  
21  
22  
23  
24  
0009  
0000  
000C  
0000  
Typical timeout for individual block erase, 2n ms, 0000 = not supported  
Typical timeout for full chip erase, 2n ms, 0000 = not supported  
Maximum timeout for single byte/word program, 2n µs, 0000 = not supported  
Maximum timeout for maximum size multiple byte/word program, 2n µs, 0000 = not  
supported  
25  
26  
27  
28  
29  
0003  
0000  
0016  
0001  
0000  
Maximum timeout for individual block erase, 2n ms, 0000 = not supported  
Maximum timeout for full chip erase, 2n ms, 0000 = not supported  
Device size, 2n bytes  
Bus Interface x16 = 1  
Flash device interface description 0000 = async  
2A, 2B 0000, 0000 Maximum number of bytes in multi-byte program or page, 2n  
2C 0003 Number of erase block regions within device (4K words and 32K words)  
2D, 2E 002F, 0000 Top boot block device erase block region information 1, 8 blocks …  
0007, 0000 Bottom boot block device erase block region information 1, 8 blocks …  
2F, 30 0000, 0001 Top boot block device …..of 8KB  
0020, 0000 Bottom boot block device …..of 8KB  
31, 32 000E, 0000 Top boot block 15 blocks of ….  
000E, 0000 Bottom boot block 15 blocks of ….  
33, 34 0000, 0001 ……64KB  
35, 36 0007, 0000 Top boot block device …..48 blocks of  
002F, 0000 Bottom boot block device …..48 blocks of  
(continued on next page)  
2 Meg x 16 Async/Page/Burst Flash Memory  
MT28F322D20FH_4.p65 – Rev. 4, Pub. 7/02  
Micron Technology, Inc., reserves the right to change products or specifications without notice.  
©2002, Micron Technology, Inc.  
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