2 MEG x 16
ASYNC/PAGE/BURST FLASH MEMORY
RESET OPERATION
VIH
VIL
CE#
VIH
VIL
RST#
t
RP
VIH
VIL
OE#
VOH
VOL
DQ0–DQ15
t
RWH
READ AND WRITE TIMING PARAMETERS
-70/-80
-70/-80
1.80V–2.25V
1.70V–1.90V
SYMBOL
MIN
MAX
200
MIN
MAX
200
UNITS
ns
t
RWH
t
RP
100
100
ns
2 Meg x 16 Async/Page/Burst Flash Memory
MT28F322D20FH_4.p65 – Rev. 4, Pub. 7/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
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