2 MEG x 16
ASYNC/PAGE/BURST FLASH MEMORY
ASYNCHRONOUS PAGE MODE READ OPERATION
VIH
VIL
A3–A20
A0–A2
VALID ADDRESS
t
t
RC
VIH
VIL
VALID
ADDRESS
VALID
ADDRESS
VALID
ADDRESS
VALID ADDRESS
AA
VIH
VIL
ADV#
CE#
t
OD
VIH
VIL
t
ACE
VIH
VIL
OE#
WE#
VIH
VIL
VOH
VOL
WAIT#
t
t
t
AOE
APA
OH
VOH
VOL
VALID
OUTPUT
VALID
OUTPUT
VALID
OUTPUT
VALID
OUTPUT
High-Z
DQ0–DQ15
RST#
t
RWH
VIH
VIL
UNDEFINED
READ TIMING PARAMETERS
MT28F322D20 (VCC = 1.80V–2.25V)
MT28F322D18 (VCC = 1.70V–1.90V)
-70
-80
-70
-80
SYMBOL
MIN
MAX
70
MIN
MAX
80
UNITS
ns
SYMBOL
MIN
MAX
70
MIN
MAX
80
UNITS
ns
t
t
t
t
t
AA
RC
t
ACE
70
80
ns
RWH
OD
OH
200
15
200
25
ns
t
APA
30
30
ns
ns
t
AOE
25
30
ns
0
0
ns
2 Meg x 16 Async/Page/Burst Flash Memory
MT28F322D20FH_4.p65 – Rev. 4, Pub. 7/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
35
MICRON [ MICRON TECHNOLOGY ]
