2 MEG x 16
ASYNC/PAGE/BURST FLASH MEMORY
4-WORD SYNCHRONOUS BURST OPERATION
VIH
VIL
CLK
t
t
AKS
AKH
VIH
VIL
A0–A20
VALID
ADDRESS
t
AA
t
AVH
t
VIH
VIL
VPH
ADV#
t
AADV
t
VP
t
t
VKS
OD
VIH
VIL
CE#
t
ACE
t
CVS
t
CKS
VIH
VIL
OE#
VIH
VIL
WE#
VOH
VOL
VOH
WAIT#
t
t
t
KOH
OH
AOE
t
VALID
OUTPUT
VALID
OUTPUT
VALID
OUTPUT
VALID
OUTPUT
DQ0–DQ15
High-Z
VO L
ACLK
UNDEFINED
READ TIMING PARAMETERS
MT28F322D20 (VCC = 1.80V–2.25V)
READ TIMING PARAMETERS
MT28F322D18 (VCC = 1.70V–1.90V)
-705
-804
-705
-804
SYMBOL
MIN
MAX
MIN
7
MAX
UNITS
ns
SYMBOL
MIN
MAX
MIN
7
MAX
UNITS
ns
t
t
AKS
7
7
9
AKS
7
7
9
t
t
VKS
7
ns
VKS
7
ns
t
t
CKS
13
ns
CKS
13
ns
t
t
ACLK
15
20
ns
ACLK
17
20
ns
t
t
KOH
3
5
ns
KOH
3
5
ns
t
t
AKH
10
10
10
10
ns
AKH
10
10
10
10
ns
t
t
CVS
ns
CVS
ns
t
t
AA
70
70
70
80
80
80
ns
AA
70
70
70
80
80
80
ns
t
t
ACE
ns
ACE
ns
t
t
AADV
ns
AADV
ns
t
t
VP
10
10
3
10
10
3
ns
VP
10
10
3
10
10
3
ns
t
t
VPH
ns
VPH
ns
t
t
AVH
ns
AVH
ns
t
t
AOE
25
15
30
25
ns
AOE
25
15
30
25
ns
t
t
OD
ns
OD
ns
t
t
OH
0
0
ns
OH
0
0
ns
2 Meg x 16 Async/Page/Burst Flash Memory
MT28F322D20FH_4.p65 – Rev. 4, Pub. 7/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
37
MICRON [ MICRON TECHNOLOGY ]
