2 MEG x 16
ASYNC/PAGE/BURST FLASH MEMORY
SINGLE ASYNCHRONOUS READ OPERATION
VIH
VIL
A0–A20
VALID ADDRESS
t
t
AA
RC
t
OD
VIH
VIL
ADV#
CE#
VIH
VIL
t
ACE
VIH
VIL
OE#
t
OH
VIH
VIL
WE#
VOH
VOL
WAIT#
t
AOE
VOH
VOL
High-Z
VALID OUTPUT
DQ0–DQ15
RST#
t
RWH
VIH
VIL
UNDEFINED
READ TIMING PARAMETERS
MT28F322D20 (VCC = 1.80V–2.25V)
MT28F322D18 (VCC = 1.70V–1.90V)
-70
-80
-70
-80
SYMBOL
MIN
MAX
70
MIN
MAX
80
UNITS
ns
SYMBOL
MIN
MAX
200
15
MIN
MAX
200
25
UNITS
ns
t
t
AA
RWH
t
t
ACE
70
80
ns
OD
ns
t
t
AOE
25
30
ns
OH
0
0
ns
t
RC
70
80
ns
2 Meg x 16 Async/Page/Burst Flash Memory
MT28F322D20FH_4.p65 – Rev. 4, Pub. 7/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
34
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