OBSOLETE
2, 4 MEG x 72
NONBUFFERED DRAM DIMMs
ABSOLUTE MAXIMUM RATINGS*
Voltage on V
DD
Pin Relative to V
SS
................. -1V to +4.6V
Voltage on Inputs or I/O Pins
Relative to V
SS
................................................ -1V to +4.6V
Operating Temperature, T
A
(ambient) .......... 0°C to +70°C
Storage Temperature (plastic) .................... -55°C to +125°C
Power Dissipation ............................................................. 9W
*Stresses greater than those listed under “Absolute Maxi-
mum Ratings” may cause permanent damage to the device.
This is a stress rating only, and functional operation of the
device at these or any other conditions above those indi-
cated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions
for extended periods may affect reliability.
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(Notes: 1) (V
DD
= +3.3V
±0.3V)
PARAMETER/CONDITION
SUPPLY VOLTAGE
INPUT HIGH VOLTAGE: Logic 1; All inputs
INPUT LOW VOLTAGE: Logic 0; All inputs
INPUT LEAKAGE CURRENT:
Any input 0V
≤
V
IN
≤
V
DD
+ 0.3V
(All other pins not under test = 0V)
CAS0#-CAS7#
A0-A10
WE0#, WE2#,
OE0#, OE2#
RAS0#-RAS3#
OUTPUT LEAKAGE CURRENT:
DQ is disabled; 0V
≤
V
OUT
≤
V
DD
+ 0.3V
OUTPUT LEVELS:
Output High Voltage (I
OUT
= -2mA)
Output Low Voltage (I
OUT
= 2mA)
DQ0-DQ63,
CB0-CB7
SYMBOL
V
DD
V
IH
V
IL
I
I
1
I
I
2
I
I
3
I
I
4
I
OZ
V
OH
V
OL
SIZE
ALL
ALL
ALL
16MB
32MB
16MB
32MB
16MB
32MB
16MB
32MB
16MB
32MB
ALL
ALL
MIN
3
2
-0.5
-4
-6
-18
-36
-10
-18
-10
-18
-5
-5
2.4
–
MAX
3.6
V
DD
+ 0.3
0.8
4
6
18
36
10
18
10
18
5
5
–
0.4
UNITS
V
V
V
µA
µA
µA
30
30
NOTES
µA
µA
V
V
2, 4 Meg x 72 Nonbuffered DRAM DIMMs
DM60.p65 – Rev. 6/98
8
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©1998,
Micron Technology, Inc.
MICRON [ MICRON TECHNOLOGY ]
