OBSOLETE
2, 4 MEG x 72
NONBUFFERED DRAM DIMMs
SERIAL PRESENCE-DETECT MATRIX
BYTE
DESCRIPTION
NUMBER OF BYTES USED BY MICRON
TOTAL NUMBER OF SPD MEMORY BYTES
MEMORY TYPE
ENTRY (VERSION) BIT7
BIT6
BIT5
BIT4
BIT3
BIT2
BIT1
BIT0
HEX
80
0
1
2
128
256
1
0
0
0
0
0
0
0
0
1
0
0
0
0
0
0
08
FAST PAGE MODE
EDO PAGE MODE
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
0
01
02
3
4
NUMBER OF ROW ADDRESSES
11
0
0
0
0
1
0
1
1
0B
NUMBER OF COLUMN ADDRESSES
10 (16MB)
11 (32MB)
0
0
0
0
0
0
0
0
1
1
0
0
1
1
0
1
0A
0B
5
6
7
8
9
NUMBER OF BANKS
DATA WIDTH
1
0
0
0
0
0
1
0
0
0
0
0
0
0
0
0
0
0
1
0
0
0
0
0
0
0
0
0
0
1
0
0
1
01
48
00
01
x72
DATA WIDTH (continued)
VOLTAGE INTERFACE
NONE
LVTTL
t
RAS# ACCESS TIME ( RAC)
50ns (-5)
60ns (-6)
0
0
0
0
1
1
1
1
0
1
0
1
1
0
0
0
32
3C
t
10
CAS# ACCESS TIME ( CAC)
13ns (-5)
15ns (-6)
0
0
0
0
0
0
0
0
1
1
1
1
0
1
1
1
0D
0F
11
12
13
MODULE CONFIGURATION TYPE
REFRESH RATES
ECC
0
0
0
0
0
0
0
0
0
0
0
0
1
0
0
0
02
00
15.625µs/NORMAL
DRAM WIDTH (PRIMARY DRAM)
x8 (16MB)
x4 (32MB)
0
0
0
0
0
0
0
0
1
0
0
1
0
0
0
0
08
04
14
ERROR CHECKING DRAM DATA WIDTH
x8 (16MB)
x4 (32MB)
0
0
0
0
0
0
0
0
0
0
0
0
1
0
0
0
1
0
0
0
0
0
0
0
08
04
00
15-61 RESERVED
62
63
SPD REVISION
REV. 0
0
0
0
0
0
0
0
0
1
0
0
0
0
x
0
0
0
0
0
x
x
x
–
0
0
1
1
0
0
0
0
1
0
0
0
0
x
0
0
0
0
0
x
x
x
–
0
1
0
0
1
1
1
1
1
0
0
0
0
x
0
0
0
0
0
x
x
x
–
0
1
0
0
1
1
1
0
1
0
0
0
0
x
0
0
0
0
0
x
x
x
–
0
1
0
0
0
1
1
1
1
0
0
0
0
x
0
0
0
0
0
x
x
x
–
0
0
1
1
0
1
1
1
1
0
0
0
1
x
0
0
0
1
0
x
x
x
–
0
1
1
0
1
1
1
0
1
0
1
1
0
x
0
1
1
0
0
x
x
x
–
0
0
0
1
1
1
0
0
1
1
0
1
0
x
1
0
1
0
0
x
x
x
–
00
3A
46
45
33
3F
3E
2C
FF
01
02
03
04
xx
01
02
03
04
00
xx
xx
xx
–
CHECKSUM FOR BYTES 0-62
16MB -5 (EDO)
16MB -6 (EDO)
16MB -6 (FPM)
32MB -5 (EDO)
32MB -6 (EDO)
32MB -6 (FPM)
MICRON
64
MANUFACTURER’S JEDEC ID CODE
65-71 MANUFACTURER’S JEDEC CODE (CONT.)
72 MANUFACTURING LOCATION
73-90 MODULE PART NUMBER (ASCII)
91
PCB IDENTIFICATION CODE
1
2
3
4
0
92
93
94
IDENTIFICATION CODE (CONT.)
YEAR OF MANUFACTURE IN BCD
WEEK OF MANUFACTURE IN BCD
95-98 MODULE SERIAL NUMBER
99-125 MANUFACTURE SPECIFIC DATA (RSVD)
NOTE:
1. “1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW.”
2. x = Variable Data.
2, 4 Meg x 72 Nonbuffered DRAM DIMMs
DM60.p65 – Rev. 6/98
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1998, Micron Technology, Inc.
7
MICRON [ MICRON TECHNOLOGY ]
