OBSOLETE
2, 4 MEG x 72
NONBUFFERED DRAM DIMMs
FAST PAGE MODE
AC ELECTRICAL CHARACTERISTICS
(Notes: 5, 6, 7, 8, 9, 12, 29) (VDD = +3.3V ±0.3V)
AC CHARACTERISTICS - FAST PAGE MODE OPTION
PARAMETER
-6
SYMBOL
MIN
MAX
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTES
t
FAST-PAGE-MODE READ-WRITE cycle time
Access time from RAS#
PRWC
85
t
RAC
60
13
17
t
RAS# to column-address delay time
Row-address hold time
RAD
15
10
60
60
110
20
0
t
RAH
t
RAS# pulse width
RAS
10,000
t
RAS# pulse width (FAST PAGE MODE)
Random READ or WRITE cycle time
RAS# to CAS# delay time
RASP
125,000
t
RC
t
RCD
16
18
t
READ command hold time (referenced to CAS#)
READ command setup time
RCH
t
RCS
0
t
Refresh period (2,048 cycles)
RAS# precharge time
REF
32
t
RP
40
0
t
RAS# to CAS# precharge time
READ command hold time (referenced to RAS#)
RAS# hold time
RPC
t
RRH
0
18
23
t
RSH
15
155
85
15
2
t
READ-WRITE cycle time
RWC
t
RAS# to WE# delay time
RWD
t
WRITE command to RAS# lead time
Transition time (rise or fall)
RWL
t
T
50
t
WRITE command hold time
WCH
10
45
0
t
WRITE command hold time (referenced to RAS#)
WE# command setup time
WCR
t
WCS
23
t
WRITE command pulse width
WE# hold time (CBR Refresh)
WE# setup time (CBR Refresh)
WP
10
10
10
t
WRH
t
WRP
2, 4 Meg x 72 Nonbuffered DRAM DIMMs
DM60.p65 – Rev. 6/98
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1998, Micron Technology, Inc.
11
MICRON [ MICRON TECHNOLOGY ]
