OBSOLETE
2, 4 MEG x 72
NONBUFFERED DRAM DIMMs
SPD EEPROM
t
t
t
F
HIGH
R
t
LOW
SCL
t
t
t
t
t
SU:STO
SU:STA
HD:STA
HD:DAT
SU:DAT
SDA IN
t
t
t
DH
AA
BUF
SDA OUT
UNDEFINED
SERIAL PRESENCE-DETECT EEPROM
TIMING PARAMETERS
SYMBOL
MIN
0.3
MAX
UNITS
µs
SYMBOL
MIN
4
MAX
UNITS
µs
t
t
AA
3.5
HIGH
t
t
BUF
4.7
µs
LOW
4.7
µs
t
t
DH
300
ns
R
1
µs
t
t
F
300
ns
SU:DAT
250
4.7
4.7
ns
t
t
HD:DAT
0
4
µs
SU:STA
µs
t
t
HD:STA
µs
SU:STO
µs
2, 4 Meg x 72 Nonbuffered DRAM DIMMs
DM60.p65 – Rev. 6/98
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1998, Micron Technology, Inc.
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