OBSOLETE
2, 4 MEG x 72
NONBUFFERED DRAM DIMMs
FAST-PAGE-MODE READ EARLY WRITE CYCLE
(Pseudo READ-MODIFY-WRITE)
t
t
RP
RASP
V
IH
IL
RAS#
CAS#
ADDR
V
t
RSH
t
t
CSH
PC
t
t
t
t
t
t
CP
CRP
RCD
CAS
CP
CAS
V
V
IH
IL
t
AR
t
RAD
RAH
t
t
CAH
t
t
t
t
CAH
ASC
ASR
ASC
V
V
IH
IL
ROW
COLUMN
COLUMN
t
ROW
CWL
t
t
RCS
RWL
t
t
WP
t
WCS
WCH
V
V
IH
IL
WE#
t
CAC
NOTE 1
t
t
t
t
DH
CLZ
OFF
DS
V
V
VALID
DATA
OH
OL
DQ
VALID DATA
OPEN
t
AA
t
RAC
V
V
IH
IL
OE#
DON’T CARE
UNDEFINED
FAST PAGE MODE
TIMING PARAMETERS
-6
-6
SYMBOL
MIN
3
MAX
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
SYMBOL
MIN
MAX
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
OFF
15
AA
30
t
PC
35
AR
45
0
t
RAC
RAD
RAH
RASP
RCD
RCS
RP
60
ASC
t
15
10
60
20
0
ASR
0
t
CAC
15
t
125,000
CAH
10
15
3
t
CAS
10,000
t
CLZ
t
40
15
15
10
0
CP
10
5
t
RSH
RWL
WCH
WCS
WP
CRP
t
CSH
60
15
10
0
t
CWL
t
DH
t
10
DS
NOTE: 1. Do not drive data prior to tristate.
2, 4 Meg x 72 Nonbuffered DRAM DIMMs
DM60.p65 – Rev. 6/98
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1998, Micron Technology, Inc.
25
MICRON [ MICRON TECHNOLOGY ]
