OBSOLETE
2, 4 MEG x 72
NONBUFFERED DRAM DIMMs
SERIAL PRESENCE-DETECT EEPROM OPERATING CONDITIONS
(Notes: 1) (VDD = +3.3V ±0.3V)
PARAMETER/CONDITION
SYMBOL
VDD
VIH
MIN
MAX
UNITS NOTES
SUPPLY VOLTAGE
3
3.6
V
V
INPUT HIGH VOLTAGE: Logic 1; All inputs
INPUT LOW VOLTAGE: Logic 0; All inputs
OUTPUT LOW VOLTAGE: IOUT = 3mA
INPUT LEAKAGE CURRENT: VIN = GND to VDD
OUTPUT LEAKAGE CURRENT: VOUT = GND to VDD
VDD × 0.7 VDD + 0.5
VIL
-1
–
VDD × 0.3
V
VOL
ILI
0.4
10
10
30
V
–
µA
µA
µA
ILO
–
STANDBY CURRENT:
ISB
–
SCL = SDA = VDD - 0.3V; All other inputs = GND or 3.3V +10%
POWER SUPPLY CURRENT:
SCL clock frequency = 100 KHz
ICC
–
2
mA
SERIAL PRESENCE-DETECT EEPROM AC ELECTRICAL CHARACTERISTICS
(Notes: 1) (VDD = +3.3V ±0.3V)
PARAMETER/CONDITION
SYMBOL
MIN
0.3
MAX
UNITS
µs
NOTES
t
SCL LOW to SDA data-out valid
Time the bus must be free before a new transition can start
Data-out hold time
AA
3.5
t
BUF
4.7
µs
t
DH
300
ns
t
SDA and SCL fall time
F
300
100
ns
t
Data-in hold time
HD:DAT
0
4
4
µs
t
Start condition hold time
Clock HIGH period
HD:STA
µs
t
HIGH
t
µs
Noise suppression time constant at SCL, SDA inputs
Clock LOW period
I
ns
t
LOW
4.7
µs
t
SDA and SCL rise time
R
1
µs
t
SCL clock frequency
SCL
100
KHz
ns
t
Data-in setup time
SU:DAT
250
4.7
4.7
t
Start condition setup time
Stop condition setup time
WRITE cycle time
SU:STA
µs
t
SU:STO
t
µs
WR
10
ms
28
2, 4 Meg x 72 Nonbuffered DRAM DIMMs
DM60.p65 – Rev. 6/98
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1998, Micron Technology, Inc.
14
MICRON [ MICRON TECHNOLOGY ]
