OBSOLETE
2, 4 MEG x 72
NONBUFFERED DRAM DIMMs
READ CYCLE 27
t
RC
t
t
RAS
RP
V
V
IH
IL
RAS#
CAS#
t
CSH
t
t
RSH
RRH
t
t
t
RCD
CAS
CRP
V
V
IH
IL
t
AR
t
t
RAD
RAH
t
t
t
ASR
ASC
CAH
t
ACH
V
V
IH
IL
ROW
ROW
COLUMN
ADDR
WE#
t
t
RCS
RCH
V
V
IH
IL
t
t
t
t
AA
RAC
CAC
CLZ
NOTE 1
t
OFF
V
V
OH
OL
DQ
OPEN
OPEN
VALID DATA
t
t
OD
OE
V
V
IH
IL
OE#
DON’T CARE
UNDEFINED
FAST PAGE MODE AND EDO PAGE MODE
TIMING PARAMETERS
-5*
-6
-5*
-6
SYMBOL
MIN
MAX
MIN
MAX
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
SYMBOL
MIN
0
MAX
12
–
MIN
MAX
15
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
t
AA
25
30
OFF (EDO)
0
3
t
t
ACH (EDO)
12
38
0
15
45
0
OFF (FPM)
–
15
t
t
AR
RAC
50
60
t
t
ASC
RAD (EDO)
9
–
12
15
10
60
104
110
14
20
0
t
t
ASR
0
0
RAD (FPM)
t
t
CAC
13
15
RAH
9
t
t
CAH
8
8
10
10
15
0
RAS
50
84
–
10,000
10,000
t
t
CAS (EDO)
10,000
–
10,000
10,000
RC (EDO)
t
t
CAS (FPM)
–
RC (FPM)
t
t
CLZ (EDO)
0
RCD (EDO)
11
–
t
t
CLZ (FPM)
–
3
RCD (FPM)
t
t
CRP
5
5
RCH
0
t
t
CSH (EDO)
38
–
45
60
0
RCS
0
0
t
t
CSH (FPM)
RP
30
0
40
0
t
t
OD (EDO)
0
12
–
15
15
15
RRH
t
t
OD (FPM)
–
3
RSH
13
15
t
OE
12
*EDO version only
t
t
NOTE: 1. For EDO, OFF is referenced from rising edge of RAS# or CAS#, whichever occurs last. For FPM, OFF is referenced from rising edge of RAS# or
CAS#, whichever occurs first.
2, 4 Meg x 72 Nonbuffered DRAM DIMMs
DM60.p65 – Rev. 6/98
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1998, Micron Technology, Inc.
17
MICRON [ MICRON TECHNOLOGY ]
