Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
6.2
DC Voltage specifications
Table 8:
DC Voltage Characteristics
VCCQ
2.7 - 3.6 V
2.7 - 3.6 V
VCC
Test Conditions
Notes
Symbol
Parameter
Min
Max
Unit
VIL
Input Low Voltage
Input High Voltage
–0.5
2.0
0.8
V
V
—
—
2, 5, 6
2, 5, 6
VIH
VCCQ + 0.5
VCC = VCCMin
—
—
0.4
0.2
—
V
V
V
VCCQ = VCCQ Min
IOL = 2 mA
VOL
Output Low Voltage
1, 2
VCC = VCCMin
VCCQ = VCCQ Min
IOL = 100 µA
VCC = VCCMIN
VCCQ = VCCQ Min
IOH = –2.5 mA
0.85 × VCCQ
VOH
Output High Voltage
1, 2
2, 3
VCC = VCCMIN
VCCQ – 0.2
—
V
V
VCCQ = VCCQ Min
IOH = –100 µA
VPEN Lockout during Program,
Erase and Lock-Bit Operations
VPENLK
VPENH
—
2.2
—
VPEN during Block Erase, Program,
or Lock-Bit Operations
2.7
—
3.6
2.0
V
V
—
—
3
4
VLKO
VCC Lockout Voltage
Notes:
1.
2.
3.
Includes STS.
Sampled, not 100% tested.
Block erases, programming, and lock-bit configurations are inhibited when VPEN ≤ VPENLK, and not guaranteed in the
range between VPENLK (max) and VPENH (min), and above VPENH (max).
Block erases, programming, and lock-bit configurations are inhibited when VCC ≤ VLKO, and not guaranteed in the range
between VLKO and VCC (min), and above VCC (max).
Includes all operational modes of the device.
Input/Output signals can undershoot to -1.0V referenced to VSS and can overshoot to VCCQ + 1.0V for duration of 2ns or
less, the VCCQ valid range is referenced to VSS
4.
5.
6.
.
6.3
Capacitance
Table 9:
Capacitance
Symbol
Parameter1
Type
Max
Unit
Condition2
CIN
Input Capacitance
Output Capacitance
6
4
7
5
pF
pF
VIN = 0.0 V
COUT
VOUT = 0.0 V
Notes:
1.
2.
Sampled, not 100% tested.
TA = -40 °C to +85 °C, VCC= VCCQ= 0 to 3.6 V.
Datasheet
22
Jan 2011
208032-03
MICRON [ MICRON TECHNOLOGY ]
