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JS28F128P30TF75A 参数 Datasheet PDF下载

JS28F128P30TF75A图片预览
型号: JS28F128P30TF75A
PDF下载: 下载PDF文件 查看货源
内容描述: 恒忆Axcell P30-65nm闪存 [Numonyx Axcell P30-65nm Flash Memory]
分类和应用: 闪存
文件页数/大小: 90 页 / 1194 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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P30-65nm SBC  
ADV# can remain asserted throughout the burst access, in which case the address is  
latched on the next valid CLK edge while ADV# is asserted. Once OE# is asserted, the  
the first word is driven onto DQ[15:0] on the next valid CLK edge after initial access  
latency delay (see Section 11.2.2, “Latency Count (RCR[13:11])” on page 36).  
Subsequent data is output on valid CLK edges following a minimum delay TCHQV (see  
Table 25, “AC Read Specifications” on page 50).  
However, for a synchronous non-array read, the same word of data will be output on  
successive clock edges until the burst length requirements are satisfied.  
The WAIT signal indicates data valid when the device is operating in synchronous mode  
(RCR.15=0). The WAIT signal is only “deasserted” when data is valid on the bus. When  
the device is operating in synchronous non-array read mode, such as read status, read  
ID, or read query, the WAIT signal is also “deasserted” when data is valid on the bus.  
WAIT behavior during synchronous non-array reads at the end of word line works  
correctly only on the first data access.  
Refer to the following waveforms for more detailed information: Figure 22,  
“Synchronous Single-Word Array or Non-array Read Timing” on page 53, and  
Figure 23, “Continuous Burst Read, showing an Output Delay Timing” on page 53, and  
Figure 24, “Synchronous Burst-Mode Four-Word Read Timing” on page 54.  
5.3  
Write  
To perform a write operation, both CE# and WE# are asserted while RST# and OE# are  
deasserted. During a write operation, address and data are latched on the rising edge  
of WE# or CE#, whichever occurs first. Table 7, “Command Bus Cycles” on page 21  
shows the bus cycle sequence for each of the supported device commands, while  
Table 6, “Command Codes and Definitions” on page 19 describes each command. See  
Table 26, “AC Write Specifications” on page 54 for signal-timing details.  
When the device is operating in write operations, WAIT is set to a deasserted state as  
determined by RCR.10.  
Note:  
Write operations with invalid VCC and/or VPP voltages can produce spurious results and  
should not be attempted.  
5.4  
Output Disable  
When OE# is deasserted, device outputs DQ[15:0] are disabled and placed in a high-  
impedance (High-Z) state, WAIT is also placed in High-Z.  
5.5  
Standby  
When CE# is deasserted the device is deselected and placed in standby, substantially  
reducing power consumption. In standby, the data outputs are placed in High-Z,  
independent of the level placed on OE#. Standby current, ICCS, is the average current  
measured over any 5ms time interval, 5μs after CE# is deasserted. During standby,  
average current is measured over the same time interval 5μs after CE# is deasserted.  
When the device is deselected (while CE# is deasserted) during a program or erase  
operation, it continues to consume active power until the program or erase operation is  
completed.  
Datasheet  
17  
Apr 2010  
OrderNumber:208033-02