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JS28F128P30TF75A 参数 Datasheet PDF下载

JS28F128P30TF75A图片预览
型号: JS28F128P30TF75A
PDF下载: 下载PDF文件 查看货源
内容描述: 恒忆Axcell P30-65nm闪存 [Numonyx Axcell P30-65nm Flash Memory]
分类和应用: 闪存
文件页数/大小: 90 页 / 1194 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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P30-65nm SBC  
5.6  
Reset  
As with any automated device, it is important to assert RST# when the system is reset.  
When the system comes out of reset, the system processor attempts to read from the  
flash memory if it is the system boot device. If a CPU reset occurs with no flash  
memory reset, improper CPU initialization may occur because the flash memory may  
be providing status information rather than array data. Flash memory devices from  
NumonyxTM allow proper CPU initialization following a system reset through the use of  
the RST# input.  
After initial power-up or reset, the device defaults to asynchronous Read Array mode,  
and the Status Register is set to 0x80.  
When RST# is driven low (RST# asserted), the flash device enters reset mode. Then all  
internal circuits are de-energized, and the output drivers are placed in High-Z. If RST#  
is asserted during a program or erase operation, the operation is terminated and the  
memory contents at the aborted location (for a program) or block (for an erase) are no  
longer valid. A device reset also clears the Status Register. See Table 18, “Power and  
Reset” on page 43 for RST# timing detail.  
When RST# is driven high (RST# deasserted), a minimum wait is required before the  
flash device is able to perform normal operations. Please consider TPHQV (R5) and  
TPHWL (W1) during system design. see Table 25, “AC Read Specifications” on page 50.  
and Section 26, “AC Write Specifications” on page 54. After this wake-up interval  
passes, normal operation is ready for execution.  
Datasheet  
18  
Apr 2010  
Order Number: 208033-02