1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39SF010A / SST39SF020A / SST39SF040
Data Sheet
AC Characteristics
Table 11: Read Cycle Timing Parameters VDD = 4.5-5.5V
SST39SF010A/020A/040-55
Min Max
SST39SF010A/020A/040-70
Symbol Parameter
Min
Max
Units
ns
TRC
TCE
TAA
Read Cycle Time
55
70
Chip Enable Access Time
Address Access Time
55
55
35
70
70
35
ns
ns
TOE
TCLZ
TOLZ
Output Enable Access Time
CE# Low to Active Output
OE# Low to Active Output
CE# High to High-Z Output
OE# High to High-Z Output
Output Hold from Address Change
ns
1
1
0
0
0
0
ns
ns
1
TCHZ
TOHZ
20
20
25
25
ns
1
ns
1
TOH
0
0
ns
T11.4 25022
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
Table 12: Program/Erase Cycle Timing Parameters
Symbol
TBP
Parameter
Min
Max
Units
µs
Byte-Program Time
Address Setup Time
Address Hold Time
WE# and CE# Setup Time
WE# and CE# Hold Time
OE# High Setup Time
OE# High Hold Time
CE# Pulse Width
20
TAS
0
30
0
ns
TAH
ns
TCS
ns
TCH
0
ns
TOES
TOEH
TCP
0
ns
10
40
40
30
30
40
0
ns
ns
TWP
WE# Pulse Width
ns
1
TWPH
WE# Pulse Width High
CE# Pulse Width High
Data Setup Time
ns
1
TCPH
ns
TDS
ns
1
TDH
Data Hold Time
ns
1
TIDA
Software ID Access and Exit Time
Sector-Erase
150
25
ns
TSE
ms
TSCE
Chip-Erase
100
ms
T12.1 25022
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
©2013 Silicon Storage Technology, Inc.
DS25022B
04/13
13
MICROCHIP [ MICROCHIP ]
