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PIC12F635-I/SN 参数 Datasheet PDF下载

PIC12F635-I/SN图片预览
型号: PIC12F635-I/SN
PDF下载: 下载PDF文件 查看货源
内容描述: 8月14日引脚,基于闪存的8位CMOS微控制器采用纳瓦技术 [8/14-Pin, Flash-Based 8-Bit CMOS Microcontrollers with nanoWatt Technology]
分类和应用: 闪存微控制器和处理器外围集成电路光电二极管PC时钟
文件页数/大小: 234 页 / 3856 K
品牌: MICROCHIP [ MICROCHIP ]
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PIC12F635/PIC16F636/639  
15.6 DC Characteristics: PIC16F639-I (Industrial)  
Standard Operating Conditions (unless otherwise stated)  
DC CHARACTERISTICS  
Operating temperature  
Supply Voltage  
-40°C TA +85°C for industrial  
2.0V VDD 3.6V  
Conditions  
Param  
Sym  
No.  
Device Characteristics  
Supply Current(1,2,3)  
Min  
Typ†  
Max  
Units  
VDD  
Note  
D010  
D011  
D012  
D013  
D014  
D015  
D016  
D017  
D020  
IDD  
11  
18  
16  
28  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
2.0  
3.0  
2.0  
3.0  
2.0  
3.0  
2.0  
3.0  
2.0  
3.0  
2.0  
3.0  
2.0  
3.0  
2.0  
3.0  
2.0  
3.0  
FOSC = 32.768 kHz  
LP Oscillator mode  
140  
220  
260  
420  
130  
215  
220  
375  
8
240  
380  
360  
650  
220  
360  
340  
550  
20  
FOSC = 1 MHz  
XT Oscillator mode  
FOSC = 4 MHz  
XT Oscillator mode  
FOSC = 1 MHz  
EC Oscillator mode  
FOSC = 4 MHz  
EC Oscillator mode  
FOSC = 31 kHz  
LFINTOSC mode  
16  
40  
340  
500  
230  
400  
0.15  
0.20  
450  
700  
400  
680  
1.2  
1.5  
FOSC = 4 MHz  
HFINTOSC mode  
FOSC = 4 MHz  
EXTRC mode  
IPD  
Power-down Base Current(4)  
WDT, BOR, Comparators,  
VREF and T1OSC disabled  
(excludes AFE)  
D021  
IWDT  
1.2  
2.0  
42  
22  
25  
32  
60  
30  
45  
39  
59  
4.5  
5.0  
2.2  
4.0  
60  
28  
35  
45  
78  
36  
55  
47  
72  
7.0  
8.0  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
2.0  
3.0  
3.0  
2.0  
3.0  
2.0  
3.0  
2.0  
3.0  
2.0  
3.0  
2.0  
3.0  
WDT Current(1)  
D022A  
D022B  
IBOR  
ILVD  
BOR Current(1)  
PLVD Current  
D023  
ICMP  
Comparator Current(1)  
D024A  
D024B  
D025  
IVREFHS  
IVREFLS  
IT1OSC  
IACT  
CVREF Current(1)  
(high-range)  
CVREF Current(1)  
(low-range)  
T1OSC Current(1)  
D026  
Active Current of AFE only  
(receiving signal)  
CS = VDD; Input = Continuous  
Wave (CW);  
1 LC Input Channel Signal  
3 LC Input Channel Signals  
10  
13  
18  
μA  
μA  
3.6  
3.6  
Amplitude = 300 mVPP.  
All channels enabled.  
D027  
ISTDBY  
Standby Current of AFE only  
(not receiving signal)  
1 LC Input Channel Enabled  
CS = VDD; ALERT = VDD  
3
4
5
5
6
7
μΑ  
μA  
μA  
3.6  
3.6  
3.6  
2 LC Input Channels Enabled  
3 LC Input Channels Enabled  
D028  
ISLEEP  
Sleep Current of AFE only  
0.2  
1
μA  
3.6  
CS = VDD; ALERT = VDD  
Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are not tested.  
The test conditions for all IDD measurements in active operation mode are: OSC1 = external square wave, from rail-to-rail; all I/O pins  
tri-stated, pulled to VDD; MCLR = VDD; WDT disabled. MCU only, Analog Front-End not included.  
The supply current is mainly a function of the operating voltage and frequency. Other factors, such as I/O pin loading and switching rate,  
oscillator type, internal code execution pattern and temperature, also have an impact on the current consumption. MCU only, Analog  
Front-End not included.  
Note 1:  
2:  
3:  
4:  
The peripheral current is the sum of the base IDD or IPD and the additional current consumed when this peripheral is enabled. The  
peripheral Δ current can be determined by subtracting the base IDD or IPD current from this limit. Max values should be used when  
calculating total current consumption.  
The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is measured with the part in Sleep  
mode, with all I/O pins in high-impedance state and tied to VDD.  
DS41232D-page 174  
© 2007 Microchip Technology Inc.  
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