PIC12F635/PIC16F636/639
15.4 DC Characteristics: PIC12F635/PIC16F636-I (Industrial)
PIC12F635/PIC16F636-E (Extended) (Continued)
Standard Operating Conditions (unless otherwise stated)
DC CHARACTERISTICS
Operating temperature
-40°C ≤ TA ≤ +85°C for industrial
-40°C ≤ TA ≤ +125°C for extended
Param
Sym
No.
Characteristic
Min
Typ†
Max
Units
Conditions
VOH
IULP
Output High Voltage
I/O ports
D090
D092
VDD – 0.7
VDD – 0.7
—
—
—
—
V
V
IOH = -3.0 mA, VDD = 4.5V (Ind.)
OSC2/CLKOUT (RC mode)
IOH = -1.3 mA, VDD = 4.5V (Ind.)
IOH = -1.0 mA, VDD = 4.5V (Ext.)
D100
Ultra Low-power Wake-up
Current
—
200
—
nA
Capacitive Loading Specs
on Output Pins
D101 COSC2 OSC2 pin
—
—
—
—
15*
50*
pF In XT, HS and LP modes when
external clock is used to drive
OSC1
D101A CIO
All I/O pins
pF
Data EEPROM Memory
Byte Endurance
Byte Endurance
VDD for Read/Write
D120 ED
D120A ED
100K
10K
1M
100K
—
—
—
E/W -40°C ≤ TA ≤ +85°C
E/W +85°C ≤ TA ≤ +125°C
D121
VDRW
VMIN
5.5
V
Using EECON1 to read/write
VMIN = Minimum operating
voltage
D122
D123
TDEW
Erase/Write cycle time
Characteristic Retention
—
5
6
ms
TRETD
40
—
—
Year Provided no other
specifications are violated
D124
TREF
Number of Total Erase/Write
Cycles before Refresh
1M
10M
—
E/W -40°C ≤ TA ≤ +85°C
(4)
Program Flash Memory
Cell Endurance
D130 EP
D130A ED
10K
1K
100K
10K
—
—
—
E/W -40°C ≤ TA ≤ +85°C
E/W +85°C ≤ TA ≤ +125°C
Cell Endurance
D131
VPR
VDD for Read
VMIN
5.5
V
VMIN = Minimum operating
voltage
D132
D133
D134
VPEW
TPEW
TRETD
VDD for Erase/Write
4.5
—
—
2
5.5
2.5
—
V
Erase/Write cycle time
Characteristic Retention
ms
40
—
Year Provided no other
specifications are violated
*
These parameters are characterized but not tested.
†
Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance only
and are not tested.
Note 1: In RC oscillator configuration, the OSC1/CLKIN pin is a Schmitt Trigger input. It is not recommended to use an
external clock in RC mode.
2: Negative current is defined as current sourced by the pin.
3: The leakage current on the MCLR pin is strongly dependent on the applied voltage level. The specified levels
represent normal operating conditions. Higher leakage current may be measured at different input voltages.
4: See Section 9.4.1 “Using the Data EEPROM” for additional information.
DS41232D-page 172
© 2007 Microchip Technology Inc.
MICROCHIP [ MICROCHIP ]
