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PIC12F635-I/SN 参数 Datasheet PDF下载

PIC12F635-I/SN图片预览
型号: PIC12F635-I/SN
PDF下载: 下载PDF文件 查看货源
内容描述: 8月14日引脚,基于闪存的8位CMOS微控制器采用纳瓦技术 [8/14-Pin, Flash-Based 8-Bit CMOS Microcontrollers with nanoWatt Technology]
分类和应用: 闪存微控制器和处理器外围集成电路光电二极管PC时钟
文件页数/大小: 234 页 / 3856 K
品牌: MICROCHIP [ MICROCHIP ]
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PIC12F635/PIC16F636/639  
15.3 DC Characteristics: PIC12F635/PIC16F636-E (Extended) (Continued)  
Standard Operating Conditions (unless otherwise stated)  
DC CHARACTERISTICS  
Operating temperature  
-40°C TA +125°C for extended  
Conditions  
Param  
No.  
Sym  
Device Characteristics  
Power-down Base  
Min  
Typ†  
Max  
Units  
VDD  
Note  
D020  
IPD  
0.15  
0.20  
0.35  
1.0  
2.0  
3.0  
42  
1.2  
1.5  
1.8  
17.5  
19  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
2.0  
3.0  
5.0  
2.0  
3.0  
5.0  
3.0  
5.0  
2.0  
3.0  
5.0  
2.0  
3.0  
5.0  
2.0  
3.0  
5.0  
2.0  
3.0  
5.0  
2.0  
3.0  
5.0  
WDT, BOR, Comparators,  
VREF and T1OSC disabled  
(4)  
Current  
(1)  
D021  
WDT Current  
22  
(1)  
D022A  
D022B  
60  
BOR Current  
85  
122  
48  
22  
PLVD Current  
25  
55  
33  
65  
(1)  
D023  
32.3  
60  
45  
Comparator Current  
78  
120  
30  
160  
36  
(1)  
D024A  
D024B  
D025  
CVREF Current  
(high-range)  
45  
55  
75  
95  
(1)  
39  
47  
CVREF Current  
(low-range)  
59  
72  
98  
124  
25  
(3)  
4.5  
5.0  
6.0  
T1OSC Current  
30  
40  
Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance only  
and are not tested.  
Note 1: The test conditions for all IDD measurements in Active Operation mode are: OSC1 = external square wave, from  
rail-to-rail; all I/O pins tri-stated, pulled to VDD; MCLR = VDD; WDT disabled.  
2: The supply current is mainly a function of the operating voltage and frequency. Other factors, such as I/O pin  
loading and switching rate, oscillator type, internal code execution pattern and temperature, also have an impact  
on the current consumption.  
3: The peripheral current is the sum of the base IDD or IPD and the additional current consumed when this periph-  
eral is enabled. The peripheral Δ current can be determined by subtracting the base IDD or IPD current from this  
limit. Max values should be used when calculating total current consumption.  
4: The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is  
measured with the part in Sleep mode, with all I/O pins in high-impedance state and tied to VDD.  
DS41232D-page 170  
© 2007 Microchip Technology Inc.  
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