欢迎访问ic37.com |
会员登录 免费注册
发布采购

PIC12F635-I/SN 参数 Datasheet PDF下载

PIC12F635-I/SN图片预览
型号: PIC12F635-I/SN
PDF下载: 下载PDF文件 查看货源
内容描述: 8月14日引脚,基于闪存的8位CMOS微控制器采用纳瓦技术 [8/14-Pin, Flash-Based 8-Bit CMOS Microcontrollers with nanoWatt Technology]
分类和应用: 闪存微控制器和处理器外围集成电路光电二极管PC时钟
文件页数/大小: 234 页 / 3856 K
品牌: MICROCHIP [ MICROCHIP ]
 浏览型号PIC12F635-I/SN的Datasheet PDF文件第167页浏览型号PIC12F635-I/SN的Datasheet PDF文件第168页浏览型号PIC12F635-I/SN的Datasheet PDF文件第169页浏览型号PIC12F635-I/SN的Datasheet PDF文件第170页浏览型号PIC12F635-I/SN的Datasheet PDF文件第172页浏览型号PIC12F635-I/SN的Datasheet PDF文件第173页浏览型号PIC12F635-I/SN的Datasheet PDF文件第174页浏览型号PIC12F635-I/SN的Datasheet PDF文件第175页  
PIC12F635/PIC16F636/639  
15.3 DC Characteristics: PIC12F635/PIC16F636-E (Extended)  
Standard Operating Conditions (unless otherwise stated)  
DC CHARACTERISTICS  
Operating temperature  
-40°C TA +125°C for extended  
Conditions  
Param  
No.  
Sym  
Device Characteristics  
Min  
Typ†  
Max  
Units  
VDD  
Note  
(1,2)  
D010E IDD  
Supply Current  
11  
18  
16  
28  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
mA  
μA  
μA  
μA  
μA  
μA  
mA  
μA  
μA  
μA  
μA  
μA  
mA  
μA  
μA  
mA  
μA  
μA  
mA  
mA  
mA  
2.0  
3.0  
5.0  
2.0  
3.0  
5.0  
2.0  
3.0  
5.0  
2.0  
3.0  
5.0  
2.0  
3.0  
5.0  
2.0  
3.0  
5.0  
2.0  
3.0  
5.0  
2.0  
3.0  
5.0  
2.0  
3.0  
5.0  
4.5  
5.0  
FOSC = 32.768 kHz  
LP Oscillator mode  
35  
54  
D011E  
FOSC = 1 MHz  
XT Oscillator mode  
140  
220  
380  
260  
420  
0.8  
240  
380  
550  
360  
650  
1.1  
D012E  
D013E  
D014E  
D015E  
D016E  
D017E  
D018E  
D019E  
FOSC = 4 MHz  
XT Oscillator mode  
FOSC = 1 MHz  
EC Oscillator mode  
130  
215  
360  
220  
375  
0.65  
8
220  
360  
520  
340  
550  
1.0  
FOSC = 4 MHz  
EC Oscillator mode  
FOSC = 31 kHz  
LFINTOSC mode  
20  
16  
40  
31  
65  
FOSC = 4 MHz  
HFINTOSC mode  
340  
500  
0.8  
450  
700  
1.2  
410  
700  
1.30  
230  
400  
0.63  
2.6  
650  
950  
1.65  
100  
680  
1.1  
FOSC = 8 MHz  
HFINTOSC mode  
FOSC = 4 MHz  
EXTRC mode  
FOSC = 20 MHz  
HS Oscillator mode  
3.25  
3.35  
2.8  
Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance only  
and are not tested.  
Note 1: The test conditions for all IDD measurements in Active Operation mode are: OSC1 = external square wave, from  
rail-to-rail; all I/O pins tri-stated, pulled to VDD; MCLR = VDD; WDT disabled.  
2: The supply current is mainly a function of the operating voltage and frequency. Other factors, such as I/O pin  
loading and switching rate, oscillator type, internal code execution pattern and temperature, also have an impact  
on the current consumption.  
3: The peripheral current is the sum of the base IDD or IPD and the additional current consumed when this periph-  
eral is enabled. The peripheral Δ current can be determined by subtracting the base IDD or IPD current from this  
limit. Max values should be used when calculating total current consumption.  
4: The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is  
measured with the part in Sleep mode, with all I/O pins in high-impedance state and tied to VDD.  
© 2007 Microchip Technology Inc.  
DS41232D-page 169  
 复制成功!