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W78M32VP-100BM 参数 Datasheet PDF下载

W78M32VP-100BM图片预览
型号: W78M32VP-100BM
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash,]
分类和应用: 内存集成电路
文件页数/大小: 47 页 / 1902 K
品牌: MERCURY [ MERCURY UNITED ELECTRONICS INC ]
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W78M32VP-XBX  
Table 36 – AC CHARACTERISTICS — WRITE/ERASE/PROGRAM OPERATIONS —  
WE# CONTROLLED  
VCC = 3.3V ± 0.3V, -55°C TA +125°C  
-110  
Min Max  
110  
-120  
Parameter  
Symbol  
Unit  
Min Max  
Write Cycle Time (3)  
tAVAV  
tELWL  
tWC  
tCS  
tWP  
tAS  
120  
ns  
ns  
Chip Select Setup Time (3)  
Write Enable Pulse Width  
Address Setup Time  
0
35  
0
0
35  
0
tWLWH  
tAVWL  
tDVWH  
tWHDX  
tWLAX  
tWHWL  
tWHWH1  
tWHWH2  
tGHWL  
tVCS  
ns  
ns  
Data Setup Time  
tDS  
30  
0
30  
0
ns  
Data Hold Time  
tDH  
tAH  
ns  
Address Hold Time  
45  
30  
45  
30  
ns  
Write Enable Pulse Width High (3)  
Duration of Byte Programming Operation (1)  
Sector Erase (2)  
tWPH  
ns  
480  
5
480  
5
μs  
sec  
ns  
Read Recovery Time before Write (3)  
0
0
VCC Setup Time (3)  
35  
35  
μs  
sec  
ns  
Chip Programming Time (4)  
200  
200  
Address Setup Time to OE# low during toggle bit polling  
tASO  
15  
15  
Notes:  
1. Typical value for tWHWH1 is 6μs.  
2. Typical value for tWHWH2 is 0.5 sec.  
3. Guaranteed by design, but not tested.  
4. Typical value is 50 sec. The typical chip program time is considerably less than the maximum chip programming time listed, since most bytes program faster than the maximum program times listed.  
TABLE 37 – AC CHARACTERISTICS — ALTERNATE CS# CONTROLLED ERASE AND PROGRAM OPERATIONS  
Parameter  
Description  
Speed Options  
Unit  
JEDEC  
tVAVAV  
tAVWL  
Std  
tWS  
110  
120  
120  
0
Write Cycle Time (1)  
Min  
Min  
Min  
Min  
Min  
Min  
Min  
Min  
Min  
Min  
Min  
Typ  
Typ  
Typ  
110  
0
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
μs  
μs  
sec  
tAS  
Address Setup Time  
tELAX  
tAH  
Address Hold Time  
45  
30  
0
50  
30  
0
tDVEH  
tDS  
Data Setup Time  
tEHDX  
tDH  
Data Hold Time  
tWHEH  
tGHEL  
tCH  
CE# Hold Time  
0
0
tGHEL  
tWS  
Read Recovery Time Before Write (OE# High to WE# Low)  
WE# Setup Time  
0
0
tWLEL  
0
0
tEHWH  
tELEH  
tWH  
WE# Hold Time  
0
0
tCP  
CS# Pulse Width  
35  
30  
480  
13.5  
0.5  
35  
30  
480  
13.5  
0.5  
tEHEL  
tCPH  
tWHWH1  
tWHWH1  
tWHWH2  
CS# Pulse Width High (1)  
Programming Operation  
Accelerated Programming Operation  
Sector Erase Operation  
tWHWH1  
tWHWH1  
tWHWH2  
Note:  
1. Not tested.  
Microsemi Corporation reserves the right to change products or specications without notice.  
August 2011 © 2011 Microsemi Corporation. All rights reserved.  
Rev. 15  
23  
Microsemi Corporation • (602) 437-1520 • www.microsemi.com  
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