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W78M32VP-100BM 参数 Datasheet PDF下载

W78M32VP-100BM图片预览
型号: W78M32VP-100BM
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash,]
分类和应用: 内存集成电路
文件页数/大小: 47 页 / 1902 K
品牌: MERCURY [ MERCURY UNITED ELECTRONICS INC ]
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W78M32VP-XBX  
TABLE 34 – AC CHARACTERISTICS — HARDWARE RESET (1)  
Parameter  
Symbol  
Min  
Max  
Unit  
RESET# Pin Low (During Embedded Algorithms)  
to Read Mode  
tready  
35  
μs  
RESET# Pin Low (NOT During Embedded Algorithms)  
to Read Mode  
tready  
tRP  
35  
35  
200  
10  
0
μs  
μs  
ns  
μs  
ns  
RESET# Pulse Width  
RESET# High Time Before Read  
RESET# Low to Standby Mode  
RY/BY# Recovery Time  
tRH  
tRPD  
tRB  
TABLE 35 – POWER-UP SEQUENCE TIMINGS  
Parameter  
Symbol  
Min  
35  
Max  
Unit  
μs  
Reset Low Time from rising edge of VCC (or last Reset pulse) to rising edge of RESET#  
Reset Low Time from rising edge of VIO (or last Reset pulse) to rising edge of RESET#  
Reset High Time before Read  
tVCS  
tVIOS  
tRH  
35  
μs  
200  
μs  
Notes  
1. VIO < VCC + 200 mV.  
2. VIO and VCC ramp must be synchronized during power up.  
3. If RESET# is not stable for tVCS or tVIOS  
:
The device does not permit any read and write operations.  
A valid read operation returns FFh.  
A hardware reset is required.  
4. VCC maximum power-up current (RST=VIL) is 20 mA.  
Microsemi Corporation reserves the right to change products or specications without notice.  
August 2011 © 2011 Microsemi Corporation. All rights reserved.  
Rev. 15  
22  
Microsemi Corporation • (602) 437-1520 • www.microsemi.com  
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