W78M32VP-XBX
TABLE 38 – ERASE AND PROGRAMMING PERFORMANCE
VCC = 3.3V ± 0.3V, -55°C ≤ TA ≤ +125°C
Typ
(Note 1)
0.5
Max
(Note 2)
3.5
Parameter
Unit
Comments
Sector Erase Time
sec
sec
μs
Excludes 00h programming prior to erasure (Note 4)
Chip Erase Time
64
256
Total Write Buffer Time (Note 3)
Total Accelerated Write Buffer Programming Time (Note 3)
Ship Program Time
480
432
μs
Excludes system level overhead (Note 5)
123
sec
Notes
1. Typical program and erase times assume the following conditions: 25ºC, 3.6V VCC, 10,000 cycles,
checker board pattern.
4. In the pre-programming step of the embedded erase algorithm, all bits are programmed to 00H
before erasure.
2. Under corst case conditions of -40ºC, VCC = 3.0V, 100,000 cycle.
3. Effective write buffer specification is based upon 32-word write buffer operation.
5. System0level overhead is the time required to execute the two-or four-bus-cycle sequence for the
program command. See table 38 and 39.
Microsemi Corporation reserves the right to change products or specifications without notice.
August 2011 © 2011 Microsemi Corporation. All rights reserved.
Rev. 15
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