W78M32VP-XBX
TABLE 25 – SECURED SILICON SECTOR EXIT
(LLD Function = lld_SecSiSectorExitCmd)
Cycle
Operation
Word Address
Base + 555h
Base + 2AAh
Base + 555h
Base + 000h
Data
00AAh
0055h
0088h
0000h
Unlock Cycle 1
Unlock Cycle 2
Exit Cycle 3
Exit Cycle 4
Write
Note
Base = Base Address.
TABLE 26 – ABSOLUTE MAXIMUM RATINGS
Description
Rating
Storage Temperature
-55ºC to +125ºC
Ambient Temperature with Power Applied
All Inputs and I/Os except as noted below (Note 1)
-0.5V to VCC + 0.5V
-0.5V to +4.0 V
-0.5V to +4.0 V
0.5V to +12.5V
V
CC (Note 1)
Voltage with Respect to Ground
VIO
A9 and ACC (Note 2)
Notes
1. Minimum DC voltage on input or I/Os is –0.5 V. During voltage transitions, inputs or I/Os may
undershoot VSS to –2.0 V for periods of up to 20 ns. See Figure 11. Maximum DC voltage on
input or I/Os is VCC + 0.5 V. During voltage transitions inputs or I/Os may overshoot to VCC +
2.0 V for periods up to 20 ns. See Figure 12.
2. Minimum DC input voltage on pins A9 and ACC its -0.5V. During voltage transitions, A9 and ACC
may overshoot VSS to –2.0 V for periods of up to 20 ns. See Figure 11. Maximum DC voltage
on pins A9 and ACC is +12.5 V, which may overshoot to 14.0 V for periods up to 20 ns.
3. No more than one output may be shorted to ground at a time. Duration of the short circuit should
not be greater than one second.
4. Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage
to the device. This is a stress rating only; functional operation of the device at these or any other
conditions above those indicated in the operational sections of this data sheet is not implied.
Exposure of the device to absolute maximum rating conditions for extended periods may affect
device reliability.
TABLE 27 – CAPACITANCE
TABLE 28 – RECOMMENDED OPERATING
CONDITIONS
TA = +25°C, f = 1.0MHz
Parameter
Symbol
CWE
Max
10.0
25.0
10.0
15.0
Unit
pF
Parameter
Symbol
VCC
VIO
Min
3.0
3.0
-55
-40
Max
3.6
Unit
V
WE# capacitance
CS# capacitance
Data I/O capacitance
Address input capacitance
Supply Voltage
CCS
pF
I/O Supply Voltage
Operating Temp. (Mil.)
Operating Temp. (Ind.)
3.6
V
CI/O
pF
TA
+125
+85
°C
°C
CAD
pF
TA
Note: For all AC and DC specifications: VIO = VCC
RY/BY#
CRB
COE
20.0
18.0
pF
pF
OE# capacitance
This parameter is guaranteed by design but not tested.
TABLE 29 – DATA RETENTION
Parameter
Test Conditions
150°C
Min
10
Unit
Years
Years
Pattern Data
Retention Time
125°C
20
Microsemi Corporation reserves the right to change products or specifications without notice.
August 2011 © 2011 Microsemi Corporation. All rights reserved.
Rev. 15
19
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
MERCURY [ MERCURY UNITED ELECTRONICS INC ]
